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This paper presents a complete thermodynamic and material balance analysis of the pyrolysis of chlorodifluoromethane at atmospheric pressure, using steam as a diluent in a diluent ratio range of 0-8. Reported expressions for the rate constants have been used to derive a rate equation for the above reaction as a function of the conversion and temperature. One of the reported rate constants has been corrected to bring about a good consistency between the thermodynamic and kinetic analyses.

Reactive ion etching is a widely-used technique for fabricating via holes in polymer-metal multilayer interconnect structures. Reactive ion etching of thin film polymers was studied using Benzocyclobutene polymer and photoresist etch mask, in O 2 and SF 6 plasma. A design of experiments (DOE) was carried out with rf power, pressure, and SF 6 concentration as the design variables, with a constant total gas flow rate. The responses measured in this study were dc bias, etch rate, via angle, uniformity, selectivity, lateral etch rate, and etch cleanliness. The DOE revealed some complex relationships between variables. DC bias was a very important parameter for explaining the observed effects on etch rate, via angle, selectivity, and lateral etching. A simple model was formulated to explain the dependence of via angle on design variables. The etching characteristics of the photoresist mask affected not only the selectivity, but also the via angle and lateral etch rate. Due to conflicting requirements posed by the responses, optimization of the reactive ion etch (RIE) process involves many trade-offs which depend on the particular application.

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