Processing and microwave characterization of multilevel interconnects using benzocyclobutene dielectric

Chinoy, Percy B.; Tajadod, James

doi:10.1109/33.257862

Cited by 48 publications

(11 citation statements)

References 8 publications

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“…Previous studies on plasma etching of BCB showed a complex interaction between power, pressure and gas composition [3]. A "one variable at a time" approach for experimentation would require a large number of experiments and yet may not provide a complete picture.…”

Section: Introductionmentioning

confidence: 99%

Reactive ion etching of benzocyclobutene polymer films

Chinoy

1997

IEEE Trans. Comp., Packag., Manufact. Technol. C

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Reactive ion etching is a widely-used technique for fabricating via holes in polymer-metal multilayer interconnect structures. Reactive ion etching of thin film polymers was studied using Benzocyclobutene polymer and photoresist etch mask, in O 2 and SF 6 plasma. A design of experiments (DOE) was carried out with rf power, pressure, and SF 6 concentration as the design variables, with a constant total gas flow rate. The responses measured in this study were dc bias, etch rate, via angle, uniformity, selectivity, lateral etch rate, and etch cleanliness. The DOE revealed some complex relationships between variables. DC bias was a very important parameter for explaining the observed effects on etch rate, via angle, selectivity, and lateral etching. A simple model was formulated to explain the dependence of via angle on design variables. The etching characteristics of the photoresist mask affected not only the selectivity, but also the via angle and lateral etch rate. Due to conflicting requirements posed by the responses, optimization of the reactive ion etch (RIE) process involves many trade-offs which depend on the particular application.

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Section: Introductionmentioning

confidence: 99%

Reactive ion etching of benzocyclobutene polymer films

Chinoy

1997

IEEE Trans. Comp., Packag., Manufact. Technol. C

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“…7, the thin-film microwave MCM-D technology developed at IMEC consists of alternating thin layers of photosensitive benzocyclobutene (BCB) dielectric (Cyclotene from Dow) and low-resistivity copper conductors on a high-quality alumina or glass carrier substrate. BCB is a well-characterized dielectric for microwave and highspeed MCM applications [31]- [33]. It has a low dielectric constant of 2.7, low dielectric losses ( ), and a moisture absorption, which is much lower compared to the more frequently used polyimide dielectrics.…”

Section: A Mcm-d Technologymentioning

confidence: 99%

Generalized analysis of coupled lines in multilayer microwave MCM-D technology-application: integrated coplanar Lange couplers

Pieters

Brebels

Beyne

et al. 1999

IEEE Trans. Microwave Theory Techn.

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In this paper, the design and realization of coplanar Lange couplers integrated in a multilayer thin-film multichip module deposition (MCM-D) technology is discussed. The MCM-D technology has been well established for the interconnection of high-speed digital circuits, and is now being recognized to be very useful for the integration and interconnection of microwave components. In this way, passive structures, such as spiral inductors, filters, and couplers, may be realized efficiently and more cost effective in MCM-D compared to monolithic microwave integrated circuits. The presented coplanar Lange couplers have been designed using an equivalent coupled-line model. A general and computational efficient method for the determination of the required modal characteristic impedances and the related geometrical parameters in a microwave multilayer coupled-line topology is presented. Also, a way to calculate the optimum coupled line length is given. Using the described method, coplanar Lange couplers have been realized and then measured. Comparison between the measurement results and HP Momentum simulations show good agreement and indicate the feasibility of designing and integrating such components in MCM-D.

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“…Publisher Item Identifier S 1521-3323(00)00181- 7. vinylsiloxane benzocyclobutene or BCB, as the dielectric layer. BCB has been extensively studied as a interlayer dielectric for thin film multilayer technology for multichip modules [1]- [4]. The chemical structure of BCB is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Redistribution and bumping of a high I/O device for flip chip assembly

Keser

Bajaj

Fang

2000

IEEE Trans. Adv. Packag.

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Redistribution and bumping of a high I/O device has been successfully achieved at Motorola's Interconnect Prototype Lab using a combination of photosensitive benzocyclobutene (BCB), electroless nickel underbump metallurgy, and photoresist defined solder printing technique. To take full advantage of flip chip packaging technology, redistribution is necessary to rewire bondpads to an area array. BCB was chosen as the interlayer dielectric between the redistributed metal traces and device circuitry. Advantages of BCB include high level of planarization, low moisture uptake, rapid thermal curing, high thermal stability, high solvent resistance, and a low dielectric constant. We successfully optimized many steps in the process flow to redistribute the bondpads. The BCB residue in vias was cleaned with a plasma descum comprised of an Ar/SF 6 mixture. BCB to BCB adhesion was improved by optimizing the curing time. The shear strength of the bumps was increased 80% by sputter-roughening of the BCB/Al interface. Sematech ATC04-2 functional wafers with 1004 bumps/die and a minimum pitch of 8 mils were successfully redistributed to a 10 mil and 16 mil mixed array pitch and solder bumped using a photodefined squeegee bump technology.

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Processing and microwave characterization of multilevel interconnects using benzocyclobutene dielectric

Cited by 48 publications

References 8 publications

Reactive ion etching of benzocyclobutene polymer films

Reactive ion etching of benzocyclobutene polymer films

Generalized analysis of coupled lines in multilayer microwave MCM-D technology-application: integrated coplanar Lange couplers

Redistribution and bumping of a high I/O device for flip chip assembly

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