Many-electron Coulomb correlations in hopping transport along layers of quantum dots

Yakimov, A. I.; Nenashev, A. V.; Двуреченский, А. В.; Timonova, Maria

doi:10.1134/1.1622039

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…Dense arrays of Ge quantum dots (QD) are of importance to all practically significant applications in optoelectronics and microelectronics. QD array is usually referred to as dense array if interactions among adjacent clusters play an important role [ 13 ], i.e., a tunnel coupling between Ge clusters arise [ 14 ]; such arrays should be considered as a whole in terms of behavior of current carrier and transport properties [ 10 ]. Ge/Si hetrostructure can include both isolated QD arrays, i.e., arrays which do not mutually interact and separated by a thick enough ( > 30 nm) Si layer, and superlattices of QD arrays, in which arrays are separated by thin Si layers and which, like SiGe/Si superlattices with quantum wells, represent a single coupled system.…”

Section: Introduction: Background and Problem Statementmentioning

confidence: 99%

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Yuryev

Arapkina

2011

Nanoscale Res Lett

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Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

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Section: Introduction: Background and Problem Statementmentioning

confidence: 99%

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Yuryev

Arapkina

2011

Nanoscale Res Lett

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Conductivity of quantum dot arrays

Reich

2020

Phys.-Usp.

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Arrays of quantum dots (QDs), i.e., semiconducting nanoparticles with typical sizes of 3–10 nm, have become more than merely an object of scientific research; they are now used in electronic devices. They are appealing mainly due to their optical properties, which depend on the QD size. Here, we consider the electronic properties of such arrays. These properties typically inherit the properties of bulk semiconductors, but in some cases can be substantially different due to the discreteness of sizes and a particular type of disorder in the array: the difference in size and spacing among QDs, as well as the number of donors. Notably, in such arrays, the metal–dielectric transition occurs at a much higher concentration of donors than in the bulk material. The nature of hopping conductivity in the dielectric phase strongly depends on the disorder type, quantum confinement effects, the Coulomb blockade, and the overlap integral of QDs.

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Many-electron Coulomb correlations in hopping transport along layers of quantum dots

Cited by 2 publications

References 11 publications

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Conductivity of quantum dot arrays

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