Mapping antibonding electron states of a Pb adatom on Pb(111)

Lian, J. C.; Cheng, Zhihai; Jiang, Yeping; Zhang, Y. Y.; Liu, L. W.; Ji, Wei; Xiao, Wende; Du, Shixuan; Hofer, Werner A.; Gao, Hongjun

doi:10.1103/physrevb.81.195411

Cited by 12 publications

(2 citation statements)

References 36 publications

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“…For the identification, we utilized a technique called atom manipulation imaging. [25][26][27][28] In this imaging method, a single adsorbed atom, most probably Pb, was trapped between the tip and the surface and scanned over the surface to take a height image under constant current. Since hcp sites are stable for the adatoms, the sites are identified as wide and bright spots in the manipulation images.…”

Section: Experimental Methodsmentioning

confidence: 99%

Spatial variation in local work function as an origin of moiré contrast in scanning tunneling microscopy images of Pb thin films/Si(111)

Kim¹,

Hasegawa²

2016

Jpn. J. Appl. Phys.

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By scanning tunneling microscopy (STM), we measured an evolution of electrical conductance from the tunneling to point contact regimes on Pb thin films formed on a Si(111) substrate. Immediately before the contact formation, the conductance evolution curves exhibit an onset of the conductance that is presumably due to a short-range chemical interaction between the tip apex atom and surface atom(s), and we found that the onset can be utilized as a reference of the tip–sample distance. By measuring the spatial variation in onset distance, we investigated surface atomic corrugation in moiré-corrugated areas and found that the geometrical corrugation is negligibly small (less than 2 pm) on the surfaces of 7-monolayer Pb thin films. We also observed a local variation in apparent barrier height depending on the moiré contrast in the tunneling regime, which leads us to conclude that the spatial variation in local work function is the origin of the moiré corrugation observed in STM images.

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Section: Experimental Methodsmentioning

confidence: 99%

Spatial variation in local work function as an origin of moiré contrast in scanning tunneling microscopy images of Pb thin films/Si(111)

Kim¹,

Hasegawa²

2016

Jpn. J. Appl. Phys.

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“…Pb adatoms on a Pb (111) surface were observed with a scanning tunneling microscope (STM), and it was confirmed that the adatoms possess sp 3 hybrid atomic orbitals. These hybrid orbitals have a specific orientation, and the four lobes are naturally oriented in a tetrahedral fashion [22]. The Pb point contacts have been investigated theoretically and experimentally with techniques such as the STM, the mechanically controllable break junction (MCBJ), and the electrochemical method [23][24][25][26][27][28][29][30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor

et al. 2017

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One focus of nanoelectronics research is to exploit the physical limits in size and energy efficiency. Here, we demonstrate a device in the form of a fully metallic atomic-scale transistor based on a lead (Pb) single-atom quantum point contact. The atomic configuration of the point contact determines the conductance of the Pb atomic-scale transistor. The conductance multiplicity of the Pb single-atom transistor has been confirmed by performing switching between an electrically nonconducting "off-state" and conducting "on-states" at 1G 0 (G 0 = 2e 2 /h, where e is the electron charge, and h Planck's constant), 2.0 G 0 , 3.0 G 0 , 1.5 G 0 , 2.4 G 0 , 2.7 G 0 , 2.8 G 0 , and 5.4 G 0 , respectively. Our density-functional calculations for various ideal Pb single-atom contacts explain the atomic-configuration-related conductance multiplicity of the Pb single-atom transistor. The performance of the Pb single-atom transistors indicates that both the signatures of atomic valence and conductance quantization play roles in electron transport and bistable reconfiguration. The bistable reconfiguration of the electrode tips is an underlying mechanism in the switching of the Pb atomic-scale transistors. The absolute value of the electrochemical potential applied to the gate electrode is less than 30 mV. This merit suggests Pb [besides silver (Ag)] atomic-scale transistors as potential candidates for the development of electronic circuits with low power consumption. The dimension of the switching unit in the Pb single-atom transistor is in the range of 1 nm, which is much smaller than the projected scaling limit of the gate lengths in silicon transistors (5 nm). Therefore, the metallic single-atom transistors may provide perspectives for electronic applications beyond silicon.

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Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt

Xie

Ducry

Luisier

et al. 2022

Adv Elect Materials

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After decades of continuous scaling, further advancement of complementary metal‐oxide‐semiconductor (CMOS) technology across the entire spectrum of computing applications is today limited by power dissipation, which scales with the square of the supply voltage. Here, an atomic‐scale tin transistor is demonstrated to perform conductive switching between bistable configurations with on/off potentials ≤2.5 mV in magnitude. In addition to the low operation voltage, the channel length of the transistor is determined experimentally and with density‐functional theory to be ≤1 nm because the atoms instead of electrons are information carriers in this device. The conductance at on‐states of the bistable configurations varies between 1.2 G0 to 197 G0 (G0 = 2e2 h−1, e stands for the electron charge and h for Planck's constant). Thus, the device can supply driving current from 1 to ≈375 µA in magnitude for logic circuits with the drain‐source dc voltage at decades of millivolts. The switching frequency of the atomic‐scale tin transistor has reached 2047 Hz. Furthermore, the on/off potentials in millivolts can reduce the energy consumption in the interconnects of integrated circuits at least by ≈400 times. Therefore, the atomic‐scale tin transistor has prospects in digital circuits with ultralow‐power dissipation and can contribute to the sustainability of modern society.

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Mapping antibonding electron states of a Pb adatom on Pb(111)

Cited by 12 publications

References 36 publications

Spatial variation in local work function as an origin of moiré contrast in scanning tunneling microscopy images of Pb thin films/Si(111)

Spatial variation in local work function as an origin of moiré contrast in scanning tunneling microscopy images of Pb thin films/Si(111)

Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor

Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt

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