Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography

Gribelyuk, M.; McCartney, Martha R.; Li, Jing; Murthy, C. S.; Ronsheim, P.; Doris, B.; McMurray, J. S.; Hegde, S.; Smith, David J.

doi:10.1103/physrevlett.89.025502

Cited by 104 publications

(43 citation statements)

References 7 publications

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“…The influence of a defect-rich surface structure on quantitative potential maps is fully recognized in the experimental procedures, [1][2][3]6 without, however, giving a clear picture. Rau et al calibrated surface depletion layers ("dead layers") by measuring the thickness dependence of the electron wave phase shift.…”

Section: Discussionmentioning

confidence: 99%

“…2 McCartney et al and Gribelyuk et al did not find dead layers, instead coating of the TEM samples with a few 10 nm thick carbon layers in conventionally Ar ion milled samples is reported to prevent from surface charging. 1,6 The special case of idealized amorphous silicon surface layers in Sec. III A shows that ion beam damaged surfaces can, under certain circumstances, be considered as passive.…”

Section: Discussionmentioning

confidence: 99%

“…Both factors are reported to be sensitive to specimen preparation. 1,3,6 It will be shown in this paper that the quantification can be further complicated by the the invasive nature of the experiment, namely the interaction of the irradiating electron beam with the sample. Especially the interaction between electrically active defects at structurally or chemically heterogeneous interfaces and electrongenerated excess charge carriers has to be taken into account.…”

Section: Introductionmentioning

confidence: 99%

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Illumination effects in holographic imaging of the electrostatic potential of defects andpnjunctions in transmission electron microscopy

2004

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Off-axis holography has successfully revealed the built-in potential in highly doped pn-junctions, making holographic phase retrieval in transmission electron microscopy (TEM) a prospective tool for imaging the electrostatic potential in a semiconductor sample or device. The effect of electron-hole pair generation during electron illumination and the presence of defect rich amorphized sample surfaces in a TEM sample on the electrostatic potential is investigated for the test case of an electrically active grain boundary and a pn-junction in silicon by numerical simulation. In the case of the grain boundary, the pair generation in the electron beam leads to significantly increased recombination currents into trap state defects. As a result, the trapped charge in the defects is decreased and the potential drop around the electrically active defect is considerably reduced, for electron-hole pair generation rates typically present in a TEM experiment even below the detection limit of holography. In the case of pn-junctions distorted potential maps are predicted for dopant densities smaller than 10 17 cm −3 .

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Illumination effects in holographic imaging of the electrostatic potential of defects andpnjunctions in transmission electron microscopy

2004

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“…Among the techniques that have been proposed so far, off-axis electron holography has demonstrated its capability to map out the 2D electrostatic potential distributions inside semiconductor devices with a spatial resolution of 3 nm and a sensitivity of 0.1 V, which is suitable for characterizing current devices having around 70 nm gate lengths or less [2]. However, the sample preparation has been known to be a key issue for voltage profiling by electron holography.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Analysis of 1D Ultra-Shallow Junctions Using Off-Axis Electron Holography

McCartney¹,

Han

et al. 2005

AIP Conference Proceedings

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Abstract. The ability to carefully engineer ultra-shallow junctions close to the gate is critical for high performance advanced CMOS devices. Electron holography (EH) has been proposed and investigated as one of the promising techniques for mapping dopant profiles at a nanometer scale in two-dimension (2D). We have developed a low-damage and reproducible sample preparation technique (based on polishing) to prepare samples suitable for EH imaging. Accurate measurements of electro-static potentials across ultra-shallow junctions (both N and P type) by EH have been obtained. Potential profiles derived from ultra-shallow junctions (in the range of 10-30 nm) closely match simulated profiles calculated from secondary ion mass spectroscopy (SIMS) doping profiles of the same junctions. This sets a good baseline for extending the application of electron holography to the quantitative mapping of 2D dopant profiles at close to nanometer spatial resolution.

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“…Since the phase shift of the electron wavefunction depends on the local electric field distributions within the sample, the electron holography technique can be used to provide quantitative information about electrostatic potential variations in materials, with nanometer-scale resolution. 9 Off-axis electron holography has been widely used to measure potential profiles associated with dopant distributions in, for example, Si p-n junctions, 10,11 and Si transistors, 12,13 including one device having a 30 nm gate length.…”

Section: Introductionmentioning

confidence: 99%

Quantitative dopant profiling of p-n junction in InGaAs∕AlGaAs light-emitting diode using off-axis electron holography

Chung

Johnson

Ding

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancies with experimental measurements in the region of the p-and n-doped AlGaAs barriers, which are located away from the InGaAs quantum wells. Revised simulations reproduce the measurements reasonably when a carrier-trap density of 6 ϫ 10 16 cm −3 in the AlGaAs barriers is subtracted from the dopant concentrations. The presence of oxygen impurities is considered as the most likely reason for the reduction in doping efficiency.

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Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography

Cited by 104 publications

References 7 publications

Illumination effects in holographic imaging of the electrostatic potential of defects andpnjunctions in transmission electron microscopy

Illumination effects in holographic imaging of the electrostatic potential of defects andpnjunctions in transmission electron microscopy

Quantitative Analysis of 1D Ultra-Shallow Junctions Using Off-Axis Electron Holography

Quantitative dopant profiling of p-n junction in InGaAs∕AlGaAs light-emitting diode using off-axis electron holography

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