Markedly distinct growth characteristics of semipolar (112¯2) and (1¯1¯22¯) InGaN epitaxial layers

Nishinaka, Junichi; Funato, Mitsuru; Kawakami, Yoichi

doi:10.1063/1.4913263

Cited by 7 publications

(8 citation statements)

References 19 publications

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“…On (0001) these IQE ranges seem realistic for a single QW close to a GaN:Mg layer, and the values for (1122) are close to reported PL IQEs. 54,55 Therefore, the lower light output at low currents of the semi-polar LEDs is due to some fundamental processes and not due to light extraction issues. This is consistent with findings in the literature.…”

Section: Doping and Contactsmentioning

confidence: 99%

Comparative study of (0001) and InGaN based light emitting diodes

Pristovsek

Humphreys

Bauer

et al. 2016

Jpn. J. Appl. Phys.

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We have systematically investigated the doping of (1122) with Si and Mg by metal-organic vapour phase epitaxy for light emitting diodes (LEDs). By Si doping of GaN we reached electron concentrations close to 10 20 cm −3 , but the topography degrades above mid 10 19 cm −3. By Mg doping we reached hole concentrations close to 5×10 17 cm −3 , using Mg partial pressures about 3× higher than those for (0001). Exceeding the maximum Mg partial pressure led to a quick degradation of the sample. Low resistivities as well as high hole concentrations required a growth temperature of 900 • C or higher. At optimised conditions the electrical properties as well as the photoluminescence of (1122) p-GaN were similar to (0001) p-GaN. The best ohmic p-contacts were achieved by NiAg metallisation. A single quantum well LED emitting at 465 nm was realised on (0001) and (1122). Droop (sub-linear increase of the light output power) occurred at much higher current densities on (1122). However, the light output of the (0001) LED was higher than that of (1122) until deep in the droop regime. Our LEDs as well as those in the literature indicate a reduction in efficiency from (0001) over semi-polar to non-polar orientations. We propose that reduced fields open a loss channel for carriers.

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Section: Doping and Contactsmentioning

confidence: 99%

Comparative study of (0001) and InGaN based light emitting diodes

Pristovsek

Humphreys

Bauer

et al. 2016

Jpn. J. Appl. Phys.

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“…The emission wavelength of the ð11 22Þ planar QW is longer than that of the ð 1 12 2Þ planar QW (480 nm versus 425 nm), which can be attributed to a higher In incorporation efficiency of the ð11 22Þ plane. 21) Figure 2(a) shows that the emission peak from the 3D QWs on ð11…”

mentioning

confidence: 99%

“…One of the plausible factors is the crystallographic orientation dependence of the In incorporation efficiency. Actually, multiple papers have already reported such dependencies, 21,[26][27][28][29] but there is no direct comparison among (0001), AEð11…”

mentioning

confidence: 99%

Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities

Matsuda

Funato

Kawakami

2017

Appl. Phys. Express

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We fabricated three-dimensional (3D) InGaN quantum wells (QWs) on semipolar GaN substrates by selective area epitaxy. It was found that polar-plane-free 3D structures can be fabricated with a particular mask pattern on the plane and that InGaN/GaN QWs on these structures exhibit facet-dependent polychromatic emission properties. In addition, time-resolved photoluminescence spectroscopy indicated that the radiative recombination lifetimes of the obtained 3D QWs without the polar (0001) plane are much shorter than those of conventional 3D QWs with the (0001) plane, particularly at long wavelengths.

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“…MQWs grown on low‐defect (

11 \bar{2} 2

) heteroepitaxial GaN templates were investigated and an IQE of 23% in the green region was achieved, comparable to the one obtained from bulk semipolar substrates . The emission wavelength was tuned from 450 to 550 nm by simply increasing the TMGa flow rate in the wells.…”

Section: Discussionmentioning

confidence: 90%

“…Nishinaka et al have recently reported IQE values, obtained by measuring the I RT / I 13 K ratio, of 47% at 460 nm and 16% at 530 nm in (

11 \bar{2} 2

) QWs grown on low‐defect bulk substrates. The comparison between their IQE values on bulk substrates and ours further confirms the quality of our semipolar GaN templates, and that of the QWs grown thereon, thus indicating that the current growth conditions are better optimized for the green wavelength range than for the blue one.…”

Section: Resultsmentioning

confidence: 99%

Green emission from semipolar InGaN quantum wells grown on low‐defect () GaN templates fabricated on patterned r‐sapphire

Mierry¹,

Kappei²,

Tendille³

et al. 2015

Physica Status Solidi (b)

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In this article, InGaN/GaN multiple quantum wells (MQWs) grown on low‐defect (112¯2) GaN templates are investigated by photoluminescence (PL), cathodoluminescence (CL), and transmission electron microscopy (TEM). The emission wavelength is tuned from 450 nm (blue) to 550 nm (green) by varying the TMGa flux in the QWs, while keeping the temperature constant. The In content in the QWs is found to increase with increasing TMGa flux. CL measurements show that the first QW and often the second one emit systematically at wavelengths shorter than the following QWs, while TEM measurements indicate that these first QWs are slightly thinner and display less In content than the rest of the stack. Both observations might be explained by considering that these first QWs grow under larger compressive strain than the subsequent QWs. Furthermore, since TEM shows that misfit dislocations oriented along the [11¯00] direction are mainly located at the lower MQW stack interface, i.e., between the first QW and the underlying template, the correlation between TEM and CL points toward a plastic relaxation occurring after the stacking of a sufficiently large number of QWs.

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Markedly distinct growth characteristics of semipolar (112¯2) and (1¯1¯22¯) InGaN epitaxial layers

Cited by 7 publications

References 19 publications

Comparative study of (0001) and InGaN based light emitting diodes

Comparative study of (0001) and InGaN based light emitting diodes

Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities

Green emission from semipolar InGaN quantum wells grown on low‐defect () GaN templates fabricated on patterned r‐sapphire

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