2020
DOI: 10.1016/j.jallcom.2020.154303
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Martensitic transformation and large exchange bias in Mn-rich Ni–Mn–Sn thin films on mica substrates

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Cited by 12 publications
(8 citation statements)
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“…The thicknesses of the film and the Ti buffer layer are found to be about 130 and 20 nm, respectively, as determined from the SEM image. These results indicate that the Ti buffer layer has a significant contribution to the growth of high-quality films because of stress release, reduction of lattice mismatch, and good match of surface free energy between the Ni–Mn–Sn film and mica substrate. , The characterization of magnetic force microscopy (MFM) demonstrates that the Ni–Mn–Sn film has a stripe domain structure, and the domain width shows a significant increase in TS and CS states (Figure S6).…”
Section: Resultsmentioning
confidence: 91%
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“…The thicknesses of the film and the Ti buffer layer are found to be about 130 and 20 nm, respectively, as determined from the SEM image. These results indicate that the Ti buffer layer has a significant contribution to the growth of high-quality films because of stress release, reduction of lattice mismatch, and good match of surface free energy between the Ni–Mn–Sn film and mica substrate. , The characterization of magnetic force microscopy (MFM) demonstrates that the Ni–Mn–Sn film has a stripe domain structure, and the domain width shows a significant increase in TS and CS states (Figure S6).…”
Section: Resultsmentioning
confidence: 91%
“…These results indicate that the Ti buffer layer has a significant contribution to the growth of high-quality films because of stress release, reduction of lattice mismatch, and good match of surface free energy between the Ni−Mn−Sn film and mica substrate. 13,49 The characterization of magnetic force microscopy (MFM) demonstrates that the Ni−Mn−Sn film has a stripe domain structure, 50 and the domain width shows a significant increase in TS and CS states (Figure S6). The thermomagnetic curves (M−T) for the films under zero field cooling (ZFC), field cooled cooling (FCC), and field cooled warming (FCW) modes in FS, TS, and CS states are shown in Figure 2a,c,e.…”
Section: Resultsmentioning
confidence: 99%
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“…[ 14 ] In addition, martensitic transformation from the α to the γ phase of Al 2 O 3 was achieved upon rapid heating induced by pulsed laser irradiation. [ 15 ] It is mentioned that the high thermal stress caused by pulsed laser irradiation is the main driving force of the phase transformation in aluminum oxide. [ 15 ] The characteristics of these Al 2 O 3 nominated it for transformation toughening in ceramic materials.…”
Section: Resultsmentioning
confidence: 99%