Mask challenges and capability development for the 65-nm device technology node: the first status report

Abstract

The slow progress of the 157nm-F 2 laser exposure tool development results in broad adaptation of high numerical aperture (NA>0.8) 193nm-ArF lithography for the 65nm-node production solution. This decision, however, forces lithographers to increase dependency on very aggressive RET technologies. This in turn demands mask making capabilities the industry has never faced before such as 100nm (@4X on mask scale) size Sub Resolution Assist Features (SRAF).This report covers our early work on our mask making capability development for the 65nm-node process technology development cycle for production in 2005. Our report includes the 65nm node mask technology capability development status for mask CD and registration dimensions control, current inspection capability/issues and development efforts for critical layer masks with aggressive RET (especially of EAPSM with SRAF).

Sensitivity of the 65-nm poly line printability to sPSM manufacturing errors

“…Since Molotof simulator predicted CD distributions with a good accuracy, the simulated image placement error and CD/IPE combined yield are most likely also estimated accurately. Summarizing simulation and empirical results, we can say that the hard shift reticle in-house has the best mask industry standard CD control (MTT and range are ~20-30nm, 4X) and PD control (MTT< 5 o , and range < 5 o ) [6]. The results are consistent with the results of the 90nm poly line printability statistical analysis we published in [4].…”