Mask defect management in extreme-ultraviolet lithography

Chen, Nai-Ching; Yu, Chengpu; Yu, Chia-Fu; Lu, Chi-Lun; Chu, James M.M.; Hsu, Luke; Chin, Angus; Yen, Anthony

doi:10.1117/1.jmm.13.2.023010

Search citation statements

Order By: Relevance

Paper Sections

Select...

Defects On Mask Absorber1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2015

Publication Types

Select...

Article1

Other1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig. 13 shows a variety of opaque and clear EUV mask defects before and after repair and the corresponding wafer image, verifying the repair [11].…”

Section: Defects On Mask Absorbermentioning

confidence: 96%

Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

Lin

2015

Microelectronic Engineering

View full text Add to dashboard Cite

“…Fig. 13 shows a variety of opaque and clear EUV mask defects before and after repair and the corresponding wafer image, verifying the repair [11].…”

Section: Defects On Mask Absorbermentioning

confidence: 96%

Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

Lin

2015

Microelectronic Engineering

View full text Add to dashboard Cite

Optical lithography with and without NGL for single-digit nanometer nodes

Lin

2015

SPIE Proceedings

View full text Add to dashboard Cite

This presentation addresses the challenges to pattern single-digit nanometer nodes. Next generation lithography such as Extreme UV, Multiple E-Beam Direct Write, may or may not help to meet the challenges. Optical lithography may still be needed for all layers, in combination with NGL for relevant layers, or not at all. The consideration will be based on necessary requirements such as overlay accuracy, resolution, and defects. However, even if all these requirements are met, only a satisfactory cost can dictate the application in high volume manufacturing. Some considerations on costs will also be presented.

show abstract

Mask defect management in extreme-ultraviolet lithography

Cited by 2 publications

References 9 publications

Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

Optical lithography with and without NGL for single-digit nanometer nodes

Contact Info

Product

Resources

About