Maskless excimer laser induced projection patterning of InP in Cl2 etch gas

X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface

“…The spectra contain a low-intensity peak at ϳ396 eV, which is assigned to InN x . 22 The laser fluence in this study is enough to prevent InP surface melting. 16,24 The presence of the NH z signal is most likely a result of insufficient decomposition of the NH 3 molecule at the sample surface.…”

Evolution of InP surfaces under low fluence pulsed UV irradiation

“…Although there have been numerous studies of the effects of nanosecond laser pulses on compound semiconductors [12][13][14], no research has been reported on the surface evolution due to multiple UV laser pulses with uniform intensity distribution below the single-pulse ablation threshold. Hence, investigation of such evolution of InP surfaces caused by irradiation with a series of nanosecond pulses of UV laser radiation with fluences below the single-pulse ablation threshold presents interest as an approach for controlled surface modification of InP and other semiconductors.…”

“…Nanosecond pulses cause mostly thermal effects while pico-to femtosecond pulses form localized defect structures. Nanosecond laser pulses of different wavelengths can be used for applications such as: surface alloy formation [9], modification of photoelectric and electrical properties of the surface [10], surface annealing [11], dry etching [12][13][14] and surface cleaning [15].…”

Laser Precision Microfabrication

“…Although substantial effort concerning photo-excited processes and LDE of semiconductors has been documented in the literature [32][33][34][35][36][37][38][39][40][41][42][43][44] it remains to be seen whether this method would find its niche in commercial applications. Examples of successful implementation of the LDE technology for device applications include fabrication of InAlAs/InGaAs high-electron-mobility transistors [45], integrated InP microlenses [46] and GaAs/AlGaAs multiple quantum well circular ring lasers [47].…”