Maskless pendeo-epitaxial growth of GaN films

Roskowski, A. M.; Preble, E. A.; Einfeldt, S.; Miraglia, P.Q.; Davis, R. F.

doi:10.1007/s11664-002-0095-6

Cited by 10 publications

(4 citation statements)

References 41 publications

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“…A step-and-terrace microstructure was never observed on the etched ( 0 2 11 ) surface, by analogy with the atomically flat and featureless microstructure obtained on this surface in laterally grown GaN films [5]. The average FWHM values for the former and the latter were 22.93 and 50.96 arcsec, respectively.…”

Section: Resultssupporting

confidence: 74%

Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films

et al. 2004

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Homoepitaxial films of 4H-SiC( 0 2 11 ) and 8° off-axis 4H-SiC(0001) have been grown and characterized. The number of domains and the range of full-width half-maxima values of the x-ray rocking curves of the [ 0 2 11 ]-oriented wafers were smaller than the analogous values acquired from the (0001) materials. Hydrogen etching of the former surface for 5 and 30 minutes reduced the RMS roughness from 0.52 nm to 0.48 nm and to 0.28 nm, respectively; the RMS roughness for a 30 µm ( 0 2 11 ) film was 0.52 nm. Micropipes in the substrates did not thread beyond the film-substrate interface. The separation distance between stacking faults was determined to be 10 µm by transmission electron microscopy. Hall mobilities and carrier concentrations of 12,200 cm 2 /Vs and 3.1x10 14 cm -3 and 800 cm 2 /Vs and 7.4x10 14 cm -3 were measured at 100°K and 300°K, respectively. Photoluminescence indicated high purity. 4H-SiC( 0 2 11 ) PiN devices exhibited average blocking voltages to 1344 V and a minimum average forward voltage drop of 3.94 V.

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Section: Resultssupporting

confidence: 74%

Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films

et al. 2004

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“…Hydrogen etching of the former for 5 and 30 minutes resulted in an increasingly smoother surface with RMS values of 0.48 and 0.28 nm, respectively. A step-and-terrace microstructure was never observed on the etched ( 0 2 11 ) surface, by analogy with the atomically flat and featureless microstructure obtained on this surface in laterally grown GaN films [4].…”

Section: Resultssupporting

confidence: 73%

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

Bishop

Preble

Hallin

et al. 2004

MSF

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Structural, microstructural, electrical and optical characterization of 4H-SiC( 0 2 11 ) homoepitaxial films and their substrates have been conducted. The number of domains and the range of full-width half-maxima values of the x-ray rocking curves of the ( 0 2 11 ) wafers (15 to 40 arcsec) were smaller than the analogous values acquired from the (0001) materials (15 to 60 arcsec). Hydrogen etching of the former surface for 5 and 30 minutes reduced the RMS roughness from 0.52 nm to 0.48 nm and to 0.28 nm, respectively; the RMS roughness for a 30 µm film was 0.52 nm. Micropipes in the substrates did not thread beyond the film-substrate interface. Hall mobilities and carrier concentrations of 12,200 cm 2 /Vs and 3.1x10 14 /cm 3 and 800 cm 2 /Vs and 7.4x10 14 /cm 3 were measured at 100°K and 300°K, respectively. Photoluminescence indicated high purity.

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“…Currently, the mainstream growth method for thin-film GaN material is organometallic vapor-phase epitaxy ͑OMVPE͒, which typically produces GaN layers with a dislocation density in the 10 9 -10 10 cm −2 range. Several techniques have been employed for dislocation reduction such as epitaxial lateral overgrowth ͑ELO͒, [2][3][4][5][6] TiN nanoporous network, [7][8][9] Si x Al 1−x N interlayer, 10 and SiN x , nanomask. [11][12][13][14] Using a conventional ELO technique, the dislocation density can be reduced to the 10 5 cm −2 in the wing region and 10 8 −10 9 cm −2 in the window region.…”

Section: Introductionmentioning

confidence: 99%

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Yun

Moon

et al. 2005

Journal of Applied Physics

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We report on the growth of and evolution of defects in GaN epilayers having single-and double-layer SiN x nanoporous insertion layers. The SiN x was formed in situ in the growth chamber of an organometallic vapor-phase epitaxy system by simultaneous flow of diluted silane and ammonia. The GaN epilayers and SiN x interlayers were grown on 6H-SiC substrates using three different nucleation layers, namely, low-temperature GaN, high-temperature GaN, and high-temperature AlN nucleation layers. X-ray-diffraction rocking curves and cross-sectional and plan-view transmission electron microscope analyses indicated that a nanoporous SiN x layer can reduce the dislocations density in the GaN overgrown layer to ϳ3 ϫ 10 8 cm −2 range; below this level the defect blocking effect of SiN x would saturate. Therefore the insertion of a second SiN x layer becomes much less effective in reducing dislocations, although it continues to reduce the point defects, as suggested by time-resolved photoluminescence measurements. The insertion of SiN x interlayers was found to improve significantly the mechanical strength of the GaN epilayers resulting in a much lower crack line density.

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Maskless pendeo-epitaxial growth of GaN films

Cited by 10 publications

References 41 publications

Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films

Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

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