2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) 2021
DOI: 10.1109/nems51815.2021.9451358
|View full text |Cite
|
Sign up to set email alerts
|

Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 10 publications
0
1
0
Order By: Relevance
“…The excess SiC material was gradually removed layer by layer using the femtosecond laser until the desired depth of the blind hole was achieved, with the remaining membrane at the bottom serving as the diaphragm for the pressure sensor. The smoothness, flatness, sidewall inclination angle, and surface roughness of the diaphragm are important factors that influence the performance of the sensor [158][159][160]. The sensor was connected to a single-arm bridge for pressure sensor characterization experiments.…”
Section: Microelectromechanical Systemsmentioning
confidence: 99%
“…The excess SiC material was gradually removed layer by layer using the femtosecond laser until the desired depth of the blind hole was achieved, with the remaining membrane at the bottom serving as the diaphragm for the pressure sensor. The smoothness, flatness, sidewall inclination angle, and surface roughness of the diaphragm are important factors that influence the performance of the sensor [158][159][160]. The sensor was connected to a single-arm bridge for pressure sensor characterization experiments.…”
Section: Microelectromechanical Systemsmentioning
confidence: 99%