2022
DOI: 10.1109/jsen.2022.3174046
|View full text |Cite
|
Sign up to set email alerts
|

Piezoresistive 4H-SiC Pressure Sensor With Diaphragm Realized by Femtosecond Laser

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(3 citation statements)
references
References 51 publications
0
3
0
Order By: Relevance
“…The excess SiC material was gradually removed layer by layer using the femtosecond laser until the desired depth of the blind hole was achieved, with the remaining membrane at the bottom serving as the diaphragm for the pressure sensor. The smoothness, flatness, sidewall inclination angle, and surface roughness of the diaphragm are important factors that influence the performance of the sensor [158][159][160]. The sensor was connected to a single-arm bridge for pressure sensor characterization experiments.…”
Section: Microelectromechanical Systemsmentioning
confidence: 99%
“…The excess SiC material was gradually removed layer by layer using the femtosecond laser until the desired depth of the blind hole was achieved, with the remaining membrane at the bottom serving as the diaphragm for the pressure sensor. The smoothness, flatness, sidewall inclination angle, and surface roughness of the diaphragm are important factors that influence the performance of the sensor [158][159][160]. The sensor was connected to a single-arm bridge for pressure sensor characterization experiments.…”
Section: Microelectromechanical Systemsmentioning
confidence: 99%
“…In contrast, 6H-SiC and 4H-SiC can be epitaxially grown to produce commercial wafers for different all-SiC devices, and relevant pressure sensors have attracted significant attention. Wang et al reported a serial of all-4H-SiC pressure sensors with a measurement range of 5MPa, in which the sensing diaphragm was produced via laser micromachining of the 4H-SiC wafer [ 75 , 76 , 77 ]. The experimental results showed that a low hysteresis error of 0.17%FS and nonlinearity of 0.20%FS could be achieved at room temperature.…”
Section: Contributions Of New Materialsmentioning
confidence: 99%
“…Recently, it was demonstrated that laser-based processing techniques can be widely used in the manufacture of pressure sensors due to the merit of low cost, clean and pollution-free [26][27][28][29][30]. For example, based on femtosecond laser micromachining, a piezoresistive bulk 4H-SiC pressure sensor with controllable diaphragm thickness was successfully developed, which maintains great output characteristics in a broad temperature range of −50 • C-300 • C under applied pressure of 0-5 MPa [26]. Highly customizable microstructures can be obtained rapidly and cost-effectively by irradiating hard materials with femtosecond laser self-channeling pulse [28,29].…”
Section: Introductionmentioning
confidence: 99%