Mass sensor for <i>in situ</i> monitoring of focused ion and electron beam induced processes

Friedli, Vinzenz; Santschi, Christian; Michler, Johann; Hoffmann, P.; Utke, Ivo

doi:10.1063/1.2435611

Cited by 33 publications

(43 citation statements)

References 17 publications

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“…9(a). This short desorption time is the same order of magnitude (29 ls) as was estimated by Friedli et al 15 and the first-order desorption energy (53 kJ/mol) estimated by Wnuk et al 16 The simulation data reproduce the trend of accelerated growth at short dwell times and saturated lower growth rates at longer FIG. 7.…”

Section: B Beam-size and -Scanning Dependencessupporting

confidence: 66%

Pulsed helium ion beam induced deposition: A means to high growth rates

Alkemade

Miro

Veldhoven³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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The sub-nanometer beam of a helium ion microscope was used to study and optimize helium-ion beam induced deposition of PtC nanopillars with the (CH 3 ) 3 Pt(C P CH 3 ) precursor. The beam current, beam dwell time, precursor refresh time, and beam focus have been independently varied. Continuous beam exposure resulted in narrow but short pillars, while pulsed exposure resulted in thinner and higher ones. Furthermore, at short dwell times the deposition efficiency was very high, especially for a defocused beam. Efficiencies were measured up to 20 times the value for continuous exposure conditions. The interpretation of the experimental data was aided by a Monte Carlo simulation of the deposition. The results indicate that two regimes are operational in ion beam induced deposition (IBID). In the first one, the adsorbed precursor molecules originally present in the beam interaction region decompose. After the original precursor layer is consumed, further depletion is averted and growth continues by the supply of molecules via adsorption and surface diffusion. Depletion around the beam impact site can be distinguished from depletion on the flanges of the growing pillars. The Monte Carlo simulations for low precursor surface coverage reproduce measured growth rates, but predict considerably narrower pillars, especially at short dwell times. Both the experiments and the simulations show that the pillar width rapidly increases with increasing beam diameter. Optimal writing strategy, good beam focusing, and rapid beam positioning are needed for efficient and precise fabrication of extended and complex nanostructures by He-IBID.

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Section: B Beam-size and -Scanning Dependencessupporting

confidence: 66%

Pulsed helium ion beam induced deposition: A means to high growth rates

Alkemade

Miro

Veldhoven³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…7͑a͒. 42 and with the geometries and arrangements of the plasma torch and the molecule nozzle shown in Fig. The lateral extension of the halo deposit is some hundreds of micrometers, as can be seen from an optical microscope image taken with white light in Fig.…”

Section: Halo Depositsmentioning

confidence: 89%

Improving the metallic content of focused electron beam-induced deposits by a scanning electron microscope integrated hydrogen-argon microplasma generator

Miyazoe

Utke

Kikuchi

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inPolymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires J. Vac. Sci. Technol. B 32, 021601 (2014); 10.1116/1.4867753 Modular ultrahigh vacuum-compatible gas-injection system with an adjustable gas flow for focused particle beam-induced deposition Electrodes for carbon nanotube devices by focused electron beam induced deposition of gold Local coinjection of a ͑H 2 -Ar͒ microplasma jet and Cu͑O 2 C 5 F 6 H͒ 2 molecules during focused electron beam-induced deposition ͑FEBID͒ was studied with respect to changes in the Cu:C ratio of deposits. Microplasma-assisted FEBID ͑30 keV and 1 nA͒ decreased codeposition of carbon, oxygen, and fluorine originating from the chamber background and the precursor molecule. The copper metal content could be increased to 41 at. %, being almost four times more than in conventional FEBID deposits without coinjection. Conventional FEB deposits from Cu͑O 2 C 5 F 6 H͒ 2 resulted in 11-12 at. % Cu content. Microplasma post-treatments of conventional FEB deposits resulted in volume changes, surface roughening, and an increase of the overall Cu content to 27 at. %. The removal mechanisms were of nonthermal nature. At repulsive bias potentials from 0 to +30 V, a pure chemical etching of the carbonaceous matrix by atomic hydrogen radials occurred. At attractive bias potentials of up to Ϫ30 V, a more efficient ion induced chemical sputtering regime prevailed where Ar + ions break carbon bonds, which in turn will be passivated by atomic hydrogen radicals to form volatile hydrocarbon compounds.

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“…The deposition efficiency for Pt-pillar growth via Ga-IBID is 0.045 nm 3 /ion at 30 keV [8]. Assuming a density of 4.5 g cm −3 [28] and a C to Pt ratio of 4:1 [19], a deposition efficiency of 0.04 nm 3 /ion corresponds to a deposition yield of 2.2 atoms/ion. In EBID, the deposition yield for the same precursor is much lower, under favourable conditions still below 0.001 nm 3 /electron [36].…”

Section: Discussionmentioning

confidence: 99%

Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH 3 ) 3 Pt(C P CH 3 ) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current.Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

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Mass sensor for in situ monitoring of focused ion and electron beam induced processes

Cited by 33 publications

References 17 publications

Pulsed helium ion beam induced deposition: A means to high growth rates

Pulsed helium ion beam induced deposition: A means to high growth rates

Improving the metallic content of focused electron beam-induced deposits by a scanning electron microscope integrated hydrogen-argon microplasma generator

Nanopillar growth by focused helium ion-beam-induced deposition

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