Material and device characterization of thin film Cu(InAl)Se/sub 2/ solar cells

Shafarman, William N.; Marsillac, Sylvain; Paulson, P. D.; Haimbodi, M. W.; Minemoto, Takashi; Birkmire, R.W.

doi:10.1109/pvsc.2002.1190616

Cited by 6 publications

(4 citation statements)

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“…Polycrystalline thin films of CuAlSe 2 [14] and CuIn 1−x Al x Se 2 [15] grown by selenization of metallic stacks have also been investigated. Recently CuIn 1−x Al x Se 2 based hetero-junction solar cells have also been studied [16][17][18]. However, basic studies on polycrystalline CuIn 1−x Al x Se 2 thin films are quite meagre.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of co-evaporated CuIn_0.5Al_0.5Se₂thin films

Reddy¹,

Raja²

2004

Semicond. Sci. Technol.

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CuIn 0.5 Al 0.5 Se 2 thin films are successfully prepared using a four-source co-evaporation technique on soda-lime glass substrates held at a substrate temperature of 673 K. Powder x-ray diffraction studies reveal that the films are polycrystalline in nature with chalcopyrite structure. The optical band gaps, calculated from spectral transmittance data, are found to be 1.56 ± 0.02 eV, 1.60 ± 0.02 eV and 1.85 ± 0.02 eV. Considering the three fold optical structure of chalcopyrite compounds, these are attributed to fundamental absorption and additional transitions arising out of crystal field and spin-orbit interactions. The crystal field ( CF ) and spin-orbit ( SO ) splitting parameters deduced from these optical band gaps are found to be −0.06 eV and 0.26 eV, respectively. The deformation potential estimated by using a quasi-cubic model is found to be −2.0 eV. The percentage of hybridization of the orbitals was determined using a linear hybridization model. The films are p-type conducting with a room temperature resistivity of 80 cm.

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Section: Introductionmentioning

confidence: 99%

Optical and structural properties of co-evaporated CuIn_0.5Al_0.5Se₂thin films

Reddy¹,

Raja²

2004

Semicond. Sci. Technol.

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“…12a represents a direct modiÿcation of the present a-Si : Ge=Fe2O3 hybrid design, with the tandem a-Si:Ge solid-state stacked cell replaced by a tandem CIGS-stacked device. The advantage is in the higher conversion e ciencies a orded by CIGS, however, research by the PV industry to implement a stacked CIGS tandem are in preliminary stages [15]. The design in Fig.…”

Section: Discussion and Plansmentioning

confidence: 99%

A hybrid multijunction photoelectrode for hydrogen production fabricated with amorphous silicon/germanium and iron oxide thin films

Miller

Rocheleau

Khan

2004

International Journal of Hydrogen Energy

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“…These samples were fabricated at IEC using a process very similar to those developed to optimize CIGS devices as has been described above [36,37]. X-ray diffraction studies have verified that these CIAS films are single phase.…”

Section: Photocapacitance Spectra In the Cu(inal)se 2 Alloysmentioning

confidence: 99%