2014
DOI: 10.5170/cern-2014-005.77
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Material Properties at Low Temperature

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Cited by 24 publications
(11 citation statements)
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“…For metallic conductors, the resistivity ρ of a material can be used to characterize chemical and physical crystal lattice imperfections in the material. The resistivity of a material is inversely proportional to its mean free path of electrons, which at RT is dominated by the electron scattering from thermal vibrations of the crystal lattice (phonons) and at low temperature by the scattering of crystal lattice imperfections (chemical impurities, vacancies, dislocations) [15]. Therefore, the change in electrical resistivity of a material during fatigue tests can be used as an indication of its crystallographic defects.…”
Section: Electrical Resistancementioning
confidence: 99%
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“…For metallic conductors, the resistivity ρ of a material can be used to characterize chemical and physical crystal lattice imperfections in the material. The resistivity of a material is inversely proportional to its mean free path of electrons, which at RT is dominated by the electron scattering from thermal vibrations of the crystal lattice (phonons) and at low temperature by the scattering of crystal lattice imperfections (chemical impurities, vacancies, dislocations) [15]. Therefore, the change in electrical resistivity of a material during fatigue tests can be used as an indication of its crystallographic defects.…”
Section: Electrical Resistancementioning
confidence: 99%
“…vacancies, dislocations) [15]. Therefore, the change in electrical resistivity of a material during fatigue tests can be used as an indication of its crystallographic defects.…”
Section: Electrical Resistancementioning
confidence: 99%
“…Similarly, C par can be extracted from measured Y 11 + Y 21 . Both the capacitances incur slight change at 4 K compared to room temperature (RT) due to variation in the dielectric constant [18], as the thermal contraction of metals is negligible [19].…”
Section: A Mom Capacitormentioning
confidence: 99%
“…R p (extracted from Re{Z 11 } shown in Fig. 4 (d) at 1 GHz where the skin effect is negligible) is ∼5× lower at 4 K compared to RT, due to the increase in copper conductivity (σ cu ) [19]. At higher frequencies, the skin effect dominates and the loss becomes proportional to 1/σ cu δ, in which the skin depth δ = √ 2/ √ ωµσ cu , where µ and σ cu represent the magnetic permeability and conductivity of the conductor.…”
Section: B Transformermentioning
confidence: 99%
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