Material quality requirements for efficient epitaxial film silicon solar cells

Alberi, Kirstin; Martin, Ina T.; Shub, Maxim; Teplin, Charles W.; Romero, Manuel J.; Reedy, R. C.; Iwaniczko, E.; Duda, A.; Stradins, Paul; Branz, Howard M.; Young, David L.

doi:10.1063/1.3309751

Cited by 46 publications

(37 citation statements)

References 12 publications

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“…ii) Specific growth mechanism at such low temperatures may account for to this improvement. Note that the efficiency of these solar cells compares very favourably with that of similar devices produced by HWCVD at 700°C [3]. Our best cell reaches an efficiency of 7% with a FF of 77%, a V OC of 546 mV and a J SC of 16.6 mA.cm -2 .…”

Section: Resultssupporting

confidence: 55%

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Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Cariou

Labrune

Cabarrocas

2011

Solar Energy Materials and Solar Cells

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We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165°C on highly doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.4 µm. This absorber is responsible for photo-generated current whereas highly doped wafer behave like electric contact, as confirmed by external quantum efficiency measurements and simulations. A best conversion efficiency of 7% is obtained for a 2.4 µm thick cell with an area of 4 cm 2 , without any light trapping features. Moreover, the achievement of a fill factor as high as 78.6% is a proof that excellent quality of the epitaxial layers can be produced at such low temperatures.

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Section: Resultssupporting

confidence: 55%

“…Research on epitaxial growth for thin film crystalline silicon solar cells has gained in importance [1][2][3] due to the cost of crystalline silicon and lessons learned from this feedstock shortage.…”

Section: Introductionmentioning

confidence: 99%

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Cariou

Labrune

Cabarrocas

2011

Solar Energy Materials and Solar Cells

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“…In addition, Si 1-x Ge x epitaxial layers can be grown at lower temperatures compared to epitaxial Si layers, while maintaining a high crystalline quality. Recently, Alberi et al fabricated and simulated a-Si (p)/c-Si (n -)/c-Si (n + ) solar cells studying the material quality requirements [6]. In this work, a-Si:H/c-Si 1-x Ge x /c-Si heterojunction solar cells (HIT cells) are fabricated for the first time.…”

Section: Introductionmentioning

confidence: 99%

Thin Film a-Si/c-Si_1-xGe_x/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements

et al. 2011

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a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) are simulated and fabricated for the first time. Cells with junction layers consisting of Si, Si0.75Ge0.25, and Si0.59Ge0.41 are compared to study the effect of increasing Ge concentration. The results show a Voc drop from 0.6V for Si cells to 0.4V forSi0.59Ge0.41, consistent with the reduction in bandgap. The measured Jsc increases from ~18.5 mA/cm2 for Si cells to 20.3 mA/cm2 for theSi0.59Ge0.41 cells,for one light pass. Simulations suggest that the measured Jscfor the Si0.59Ge0.41 based solar cells is limited by a low lifetime. In order for Si1-xGexbased cells to exceed the efficiency of Si, simulations indicate that Ge percentages larger than 40% and lifetimes above 1 μs are required.

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“…The latter option has gained particular importance [1][2][3] in view of the fact that the epitaxial silicon film can be "lifted off" from the c-Si substrate (or any other suitable substrate) on which it is grown, and be transferred to a foreign substrate [4], thus allowing for cost-saving via c-Si substrate re-use. In addition, Petermann et al [4] demonstrated that it is possible to attain ∼19% efficiency in heterojunction solar cells with only a 43 micron thick intrinsic epitaxial silicon layer.…”

Section: Introductionmentioning

confidence: 99%

Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

et al. 2013

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We have previously reported on the successful deposition of heterojunction solar cells whose thin intrinsic crystalline absorber layer is grown using the standard radio frequency plasma enhanced chemical vapour deposition process at 165 • C on highly doped P-type (100) crystalline silicon substrates. The structure had an N-doped hydrogenated amorphous silicon emitter deposited on top of the intrinsic epitaxial silicon layer. However to form the basis of a solar cell, the epitaxial silicon film must be chiefly responsible for the photo-generated current of the structure and not the underlying crystalline silicon substrate. In this article we use detailed electrical-optical modelling to calculate the minimum thickness of the epitaxial silicon layer for this to happen. We have also investigated by modelling the influence of the a-Si:H/epitaxial-Si and epitaxial-Si/c-Si interface defects, the thickness of the epitaxial silicon layer and its volume defect density on cell performance. Finally by varying the input parameters and considering various light-trapping schemes, we show that it is possible to attain a conversion efficiency in excess of 13% using only a 5 micron thick epitaxial silicon layer.

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Material quality requirements for efficient epitaxial film silicon solar cells

Cited by 46 publications

References 12 publications

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Thin Film a-Si/c-Si_1-xGe_x/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements

Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

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Material quality requirements for efficient epitaxial film silicon solar cells

Cited by 46 publications

References 12 publications

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Thin Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements

Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

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Thin Film a-Si/c-Si_1-xGe_x/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements