Material removal on silicon towards atomic and close-to-atomic scale by infrared femtosecond laser

An, Haojie; Wang, Jinshi

doi:10.1016/j.mssp.2023.107368

Cited by 6 publications

(3 citation statements)

References 32 publications

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“…Laser based techniques have larger outputs than STM and tip-based techniques, do not produce surface defects like in ALE, and high levels of process control is easily achieved [18]. Ultrashort pulsed infrared femtosecond and UV nanosecond lasers have both been used in studies to attempt to achieve ablation and material modifications at single atomic layers [19,20].…”

Section: Laser-based Techniquesmentioning

confidence: 99%

Atomic and Close-to-Atomic Scale Manufacturing: Status and Challenges

Hafeez,

Xie,

Luo

2023

2023 28th International Conference on Automation and Computing (ICAC)

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Next-generation lithography techniques such as Extreme Ultraviolet Lithography have started to reach their physical limits and will not be able to meet the requirements of future Post-Moore Era Integrated Circuit chips that will be based on quantum, photonic, and DNA computing. These future chips and the next generation of quantum products will require sub-10nm and even atomic-scale functional features. Promising candidates for atomic and close-to-atomic scale manufacturing include well-established tip-based techniques such as Scanning Tunnelling Microscopy (STM) and Atomic Force Microscopy (AFM), however, they suffer from severely low throughput, although parallel tips have been suggested to increase the throughput. The integration of these techniques with others such as AFM in Scanning Electron Microscopy has created new hybrid techniques that have greatly enhanced the capabilities of the standalone process. On the other hand, higher throughput techniques like atomic layer etching (ALE) suffer from poor process control and defects despite being promising candidates due to the self-limiting nature of the processes. Studies into laser processing techniques are being investigated to test the feasibility of laser beam-based atomic scale precision manufacturing. Furthermore, the recent progress in quantum simulations has promoted the development of the optical tweezer towards atomic scale manufacturing.

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Section: Laser-based Techniquesmentioning

confidence: 99%

Atomic and Close-to-Atomic Scale Manufacturing: Status and Challenges

Hafeez,

Xie,

Luo

2023

2023 28th International Conference on Automation and Computing (ICAC)

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“…Wang et al [24] developed a finite element model to investigate the effect of laser energy on the ablation depth, concluding that when the single pulse energy exceeded 8 J/cm 2 , the predicted ablation depth was essentially unaffected by the incident laser pulse energy. An et al [25] put forward a two-temperature model that combined with a novel molecular dynamics method to predict the ablation morphology of femtosecond laser. Zhai et al [26] adopted the theoretical calculations and wave optics simulations to analyze the results of SiC by femtosecond laser processing.…”

Section: Introductionmentioning

confidence: 99%

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Hua,

Zhang,

et al. 2024

Micromachines

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Silicon carbide (SiC) is utilized in the automotive, semiconductor, and aerospace industries because of its desirable characteristics. Nevertheless, the traditional machining method induces surface microcracks, low geometrical precision, and severe tool wear due to the intrinsic high brittleness and hardness of SiC. Femtosecond laser processing as a high-precision machining method offers a new approach to SiC processing. However, during the process of femtosecond laser ablation, temperature redistribution and changes in geometrical morphology features are caused by alterations in carrier density. Therefore, the current study presented a multi-physics model that took carrier density alterations into account to more accurately predict the geometrical morphology for femtosecond laser ablating SiC. The transient nonlinear evolutions of the optical and physical characteristics of SiC irradiated by femtosecond laser were analyzed and the influence of laser parameters on the ablation morphology was studied. The femtosecond laser ablation experiments were performed, and the ablated surfaces were subsequently analyzed. The experimental results demonstrate that the proposed model can effectively predict the geometrical morphology. The predicted error of the ablation diameter is within the range from 0.15% to 7.44%. The predicted error of the ablation depth is within the range from 1.72% to 6.94%. This work can offer a new way to control the desired geometrical morphology of SiC in the automotive, semiconductor, and aerospace industries.

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“…Prior work has shown that the native oxide on silicon can impact the ultrafast laser surface modification process. [5][6][7][8] For example, McDonald et al reported that oxidation increases the laser damage threshold of silicon, resulting in three distinct damage scenarios when considering the relationship between the thresholds for oxide and pure silicon. 5 The native oxide on Si is self-limiting to around 2nm in thickness after a couple of hours, 9 but can be readily removed using an HF acid etching process.…”

Section: Introductionmentioning

confidence: 99%

In-situ scanning tunneling microscopy of ultrafast laser damage on Si (100) surface in ultra-high vacuum

Li,

Clink,

Kuz

et al. 2023

Laser-Induced Damage in Optical Materials 2023

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Material removal on silicon towards atomic and close-to-atomic scale by infrared femtosecond laser

Cited by 6 publications

References 32 publications

Atomic and Close-to-Atomic Scale Manufacturing: Status and Challenges

Atomic and Close-to-Atomic Scale Manufacturing: Status and Challenges

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

In-situ scanning tunneling microscopy of ultrafast laser damage on Si (100) surface in ultra-high vacuum

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