Material Removal Property in Low Energy Ion Beam Etching

Abstract

Ion beam etching can achieve nanometer size easily, processing in nanometer size, then put forward higher requirements on the workpiece surface. Ion beam etching is based on the Sigmund sputtering principle to remove the material, and the defects such as vacancies and interstitials in substrate material atomic lattice will be produced in this process. When these defects are enough, they lead to material damage. This paper is based on this effect to explore the effect of the processing parameters like Ar ion incident energy and incident angle of plasma beam on the implantation depth and the lattice change, through the SRIM software simulation which Ar ions used to the silica etching, moreover, forecast and put forward the suitable parameters for ion beam etching of nanocrystals on the workpiece, to produce the smaller nanowires damage.