Ion beam etching can achieve nanometer size easily, processing in nanometer size, then put forward higher requirements on the workpiece surface. Ion beam etching is based on the Sigmund sputtering principle to remove the material, and the defects such as vacancies and interstitials in substrate material atomic lattice will be produced in this process. When these defects are enough, they lead to material damage. This paper is based on this effect to explore the effect of the processing parameters like Ar ion incident energy and incident angle of plasma beam on the implantation depth and the lattice change, through the SRIM software simulation which Ar ions used to the silica etching, moreover, forecast and put forward the suitable parameters for ion beam etching of nanocrystals on the workpiece, to produce the smaller nanowires damage.

The accelerated gas ions collide with the surface material, the atom or molecule on material surface is removed by momentum transferring. Depositing a layer low viscosity of the thin film materials on the original surface of the optical, such materials will form a layer thin film on the surface of optical element that is lower than the original. Remove the high-spatial frequencies and obtain super precision optical surface.

Arbitrary integer frequency divider based on single chip microcomputer proposed an arbitrary integer frequency divider design scheme within 100 for digital clock signals. Microcontroller detected the parity of the points frequency which was inputted by the external keyboard, and then controlled the switching controller switched the point frequency circuit between odd points frequency circuit and even. Therefore, a circuit design could solve problem along with the changing of the circuit and the heavy labor for changing the frequency num that existed in traditional divider .So it greatly reduced the cost.

The appropriate planarization layer is the foundation for realization of ion beam deposition correction polishing technology, the significant difference between ion beam deposition correction polishing technology and ordinary ion beam polishing, is using spin or methods of ion beam sputtering deposition, forming sediments which has planarization effect on the processing surface to reduce intermediate frequency error, coupled with ion beam polishing, removing the high-frequency processing error, the typical error is cut marks by single point diamond turning left on the component surface.