Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

Zhang, Peng; Yang, Jing‐Fang; Qiu, Huadong

doi:10.21203/rs.3.rs-431712/v1

Cited by 2 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Zhang Peng [6] build an accurate mathematical model of orthogonal rotary regression test of tri-factor quadratic of MRR. The model about double-faced mechanical polishing was established to obtain the relationship between any point on SiC substrate and polishing pads.…”

Section: Introductionmentioning

confidence: 99%

Modeling of solid-liquid coupling and material removal in robotic wet polishing

Pan¹,

Chen

Jin³

et al. 2022

Preprint

View full text Add to dashboard Cite

In this paper, the flow characteristics of the polishing fluid between the polishing pad and the workpiece are studied for the robotic wet polishing process, and the distribution of the polishing fluid radial velocity Ur and the liquid film thickness z at different rotating radii r are revealed. The two-dimensional computational domain consisting of the polishing pad surface, the workpiece wall and the polishing fluid is established. The particle-liquid two-phase flow simulation is carried out in Fluent, and the influence of different rotation rate ω of the polishing pad and different robot swing speeds v2 on the change and distribution of polishing fluid flow rate and temperature are elaborated. The position distribution of the abrasive particles in the wet polishing process and the velocity distribution of particles in the x and y directions impacting on the workpiece surface are simulated and analyzed for polishing fluids with different average abrasive diameters dp. The three-dimensional calculation domain for wet polishing is established; the workpiece surface erosion is simulated in Fluent; the material removal rate MRR and standard deviation of material removal σ on the workpiece surface are calculated considering different combinations of polishing fluid properties Ci and polishing kinematics Pi. Under the same process parameters, the material removal rate test value MRRT and the standard deviation of material removal test value σT are compared with the simulated values, respectively. The results show that under the combination of 64 groups of physical parameters C1-C64 of the polishing fluid, the error between the test value MRRT, σT and the simulation value MRR, σ is within 5%. With 64 sets of polishing kinematics parameters P1-P64, the average error between the test value MRRT and the simulated value MRR is 4.19%. However, when the polishing pad rotation rate ω is high, there is an inefficient polishing area in the smaller radius from the polishing pad rotation center, which results in a lower MRRT in some tests than that in simulation, with an maximum error of 8.1%. The average error between the test value σT and the simulation value σ is 3.77%. When the pressure P of the polishing pad is high, the large particles embedded in the polishing pad surface follow its rotation, causing deep scratches on the workpiece surface, which results in a larger σT in some tests, with an maximum error of 7.8%. In conclusion, the material removal principle and the influence of different process parameters in the robotic wet polishing process are revealed in this paper.through modeling and simulation of the particle-liquid two-phase flow, giving an accurate estimation of the material removal rate of the robotic wet polishing process.

show abstract

Section: Introductionmentioning

confidence: 99%

Modeling of solid-liquid coupling and material removal in robotic wet polishing

Pan¹,

Chen

Jin³

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…Due to its excellent properties, such as high melting point (3410 ± 10 ℃), high hardness, high thermal conductivity, high temperature strength, low coe cient of thermal expansion and so on [1][2][3], tungsten (W) is widely used in the aerospace, military industry, optical manufacturing, nuclear reactors, medical devices and other elds [4][5][6][7]. For example, in the eld of optical manufacturing, W has become an ideal material for the manufacture of molds for ultra-precise glass parts [8].…”

Section: Introductionmentioning

confidence: 99%

The influence of pH and H2O2 on surface quality and material removal rate during W-CMP

Wang

Peng²,

Chen³

et al. 2022

Preprint

View full text Add to dashboard Cite

In chemical mechanical polishing (CMP) process, chemical action is generally determined by pH regulator and oxidant in the polishing slurry. In this paper, tungsten was polished by CMP, and the material removal mechanism was discussed. The influence of pH values and H2O2 concentrations on surface quality and material removal rate (MRR) were studied deeply. The oxidation and dissolution kinetics of tungsten/tungsten oxide (W/WOx) during CMP process were investigated by electrochemical analysis and XPS. In addition, the microstructure of tungsten surface and its elemental composition and electronic state were also analyzed by SEM, white light interference and other characterization methods. Results reveal that tungsten has the best passivation effect at acidic pH, and the surface roughness increases with the increase of pH value, while the addition of H2O2 will deteriorate the surface quality of tungsten and improve the MRR. Besides, the different morphologies (corrosion pits, grain boundaries, etc.) formed after W-CMP indicate that the material removal mechanism is related to the composition of slurry.

show abstract

Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

Cited by 2 publications

References 22 publications

Modeling of solid-liquid coupling and material removal in robotic wet polishing

Modeling of solid-liquid coupling and material removal in robotic wet polishing

The influence of pH and H2O2 on surface quality and material removal rate during W-CMP

Contact Info

Product

Resources

About