Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC

Lü, Wei; Collins, W. E.; Mitchel, W. C.

doi:10.1007/978-3-662-09877-6_8

Cited by 6 publications

(13 citation statements)

References 118 publications

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“…It should be noted that these results were obtained for n-SiC with 4H and 6H poly-type faces [5]. Annealing at temperatures in the range 900-1,000 ºC has been shown as necessary for the formation of ohmic contacts based on Ni [5]. At these temperatures, the predominant interface structure has been identified as Ni 2 Si and carbon phases [10].…”

Section: Resultsmentioning

confidence: 76%

“…Other studies of Ni/n-SiC contacts have measured values of c within the range 5 x 10 -6 .cm 2 to 3.47 x 10 -3 .cm 2 . It should be noted that these results were obtained for n-SiC with 4H and 6H poly-type faces [5]. Annealing at temperatures in the range 900-1,000 ºC has been shown as necessary for the formation of ohmic contacts based on Ni [5].…”

Section: Resultsmentioning

confidence: 80%

“…At these temperatures, the predominant interface structure has been identified as Ni 2 Si and carbon phases [10]. Pd-based contacts have previously been examined as an ohmic contact to p-SiC [5]. Annealing at 600 ºC has given a minimum in c associated with the formation of an interfacial phase of Pd 3 Si [11].…”

Section: Resultsmentioning

confidence: 99%

“…For n-type SiC, the metal Ni has been reported to form low resistivity ohmic contacts after annealing [4,[9][10]. Other metal systems including Pd [5,11] and Ti/Ni/Ti/Au [6] have resulted in ohmic contacts at significantly lower annealing temperatures than for Ni. However, in previously reported measurements of c in nSiC using the transmission line model (TLM), the magnitude of leakage current within the substrate has remained an uncontrolled variable.…”

Section: Introductionmentioning

confidence: 97%

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Specific contact resistance of ohmic contacts to n-type SiC membranes

et al. 2011

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Membranes of epitaxial SiC have been used as a means of eliminating the leakage current into the Si substrate during circular transmission line model (CTLM) measurements. In the n +-3C-SiC/ Si wafers, the Si substrate was etched in a patterned window with dimensions up to 10 mm x 15 mm 2 . An array of CTLM metal contacts was then deposited onto the upper surface of the n + -SiC membrane. The CTLM contacts on the membrane have shown an ohmic current/ voltage response while electrodes located on the adjacent substrate were non-ohmic. Values of c were measured directly on the membranes. These results have shown a significant increase in the current flow below the metal contacts due to the presence of the Si substrate.

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Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

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Specific contact resistance of ohmic contacts to n-type SiC membranes

et al. 2011

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“…An important requirement in the realization of high power devices on SiC has been the ability to form ohmic contacts with characteristics of low resistivity and high thermally stability. The most commonly used ohmic contacts to n-SiC have consisted of the deposition of a layer of metal (Ni, Ti, Co, Pd or Pt [1]) or carbon [2] followed by annealing at ~1000 °C. However, the high temperatures required for the localized formation of metal silicides or carbides at the interface has resulted in a degradation of the underlying SiC and a roughening of the metal surface [1].…”

Section: Introductionmentioning

confidence: 99%

Effect of Low Energy Implantation on the Properties of Ti/Ni/Au Contacts to n-SiC

et al. 2015

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The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29 x 10−6 Ω.cm2. The value of ρc increased significantly at an implant dose of 1 x 1015 ions/cm2. The dependence of ρc on ion dose has been measured using both C and P implant species.

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Ohmic contacts to n-type 3C-SiC using Cr/Ni/Au and Ni/Cr/Au metallizations

Leech

Kibel

Barlow

et al. 2019

Microelectronic Engineering

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The electrical characteristics of Cr/Ni/Au and Ni/Cr/Au contacts to n-type 3C-SiC have been 15 examined using a two-contact circular test structure. In Ni/Cr/Au contacts with Ni as contact layer and Cr as intermediate layer, both the modified sheet resistance, Rsk, and the specific 17 contact resistance, ρc, have decreased continuously with increase in annealing temperature within the range 750-1000 °C. In comparison, the Cr/Ni/Au contacts with Cr as contact layer have exhibited a leveling-off in Rsk and increase in ρc after annealing at 900 and 1000 °C. 20 These measurements have been correlated with depth profiles of the interfaces using Auger 21 Electron Spectroscopy (AES). The AES profiles have shown a large-scale interdiffusion of 22 the metal layers in the n-type 3C-SiC/Cr/Ni/Au structure after annealing at 750-1000°C. In 23 comparison, the n-type 3C-SiC/Ni/Cr/Au contacts have shown only a limited interdiffusion of 24 the metals (Ni: Au) with the intermediate layer of Cr acting as a diffusion barrier for these 25 metals. 26

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Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC

Cited by 6 publications

References 118 publications

Specific contact resistance of ohmic contacts to n-type SiC membranes

Specific contact resistance of ohmic contacts to n-type SiC membranes

Effect of Low Energy Implantation on the Properties of Ti/Ni/Au Contacts to n-SiC

Ohmic contacts to n-type 3C-SiC using Cr/Ni/Au and Ni/Cr/Au metallizations

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