Materials for single-etch double patterning process: surface curing agent and thermal cure resist

Bae, Young Chan; Liu, Yi; Cardolaccia, Thomas; McDermott, John C.; Trefonas, Peter; Spizuoco, Ken; Reilly, Michael T.; Pikon, A.; Joesten, Lori; Zhang, Gary G.; Barclay, George G.; Simon, Julia; Gaurigan, Stéphanie

doi:10.1117/12.814274

Cited by 11 publications

(6 citation statements)

References 14 publications

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“…For example, line-space patterns formed using a representative 193 nm positive tone photoresist (JSR AR2928JN) shown in Figure A are readily dissolved by common organic solvents such as anisole (as shown in Figure B) and propylene glycol methyl ether acetate (PGMEA). To combat this issue, photoresist “hardening” processes using chemical freeze materials or surface curing agents have been developed to render photoresist patterns stable to subsequent coating processes used in double patterning schemes. − Unfortunately, the effectiveness of such processes which rely primarily on surface modification depends strongly on the particular photoresist in question and may not provide sufficient thermal stability for use in DSA. For example, hardened 193 nm positive tone photoresist patterns (JSR AR2928JN treated with JSR NFC FZX 112 chemical freeze material) before and after a 60 s bake at various temperatures are shown in Figure C.…”

Section: Resultsmentioning

confidence: 99%

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

et al. 2010

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We report novel strategies to integrate block copolymer self-assembly with 193 nm water immersion lithography. These strategies employ commercially available positive tone chemically amplified photoresists to spatially encode directing information into precise topographical or chemical prepatterns for the directed self-assembly of block copolymers. Each of these methods exploits the advantageous solubility and thermal properties of polarity-switched positive tone photoresist materials. Precisely registered, sublithographic self-assembled structures are fabricated using these versatile integration schemes which are fully compatible with current optical lithography patterning materials, processes, and tooling.

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Section: Resultsmentioning

confidence: 99%

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

et al. 2010

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“…Other key parameters include a low annealing temperature to induce phase separation (100 °C), which was significantly lower than the T g of the of the resist polymer (123 °C) and the spin-coating solvent was a poor solvent for the photoresist, causing minimal resist deformation (Supporting Information, Figures S4 and S5). Therefore, radiation cross-linking ,, or chemical “freezing” of the photoresist polymer template was not required. For example, directed self-assembly of PS- b -PMMA using a photoresist template typically requires annealing temperatures in excess of 180 °C, and therefore in those cases an additional step involving cross-linking or treatment of the patterned resist with a chemical “freezing” agent has been required, which can lead to an undesirable change in the dimensions of the patterned features .…”

Section: Resultsmentioning

confidence: 99%

Behavior of Lamellar Forming Block Copolymers under Nanoconfinement: Implications for Topography Directed Self-Assembly of Sub-10 nm Structures

Keen¹,

Cheng²,

Yu³

et al. 2013

Macromolecules

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Directed self-assembly of block copolymers (BCPs) is a promising technique for the nanofabrication of structures with dimensions smaller than what can be achieved by current photolithography approaches. In particular, there has been significant interest in the development of BCPs that can achieve ever smaller feature sizes with low levels of defects. Here we investigate the directed self-assembly of a high-χ BCP, polystyrene-block-poly(DL-lactide), which is capable of producing structures with dimensions less than 10 nm. In addition, we study the behavior of the BCP under nanoconfinement and the ability of the polymer chains to compress and stretch in response to the geometry of the confining volume. Key findings of this study are that the level of defects in the self-assembled structures are strongly related to the relative interfacial interactions of the BCP as well as the degree of frustration of the polymer chains under nanoconfinement relative to the bulk. These results have particular significance for nanofabrication of ordered structures, which is of relevance for the fabrication of nanowires, metamaterials, and next-generation computer chips.

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“…The favorite industrial approaches for the patterning of nanoscale devices smaller than that limit are various kinds of double or even quadruple patterning. In Litho-Etch-Litho-Etch (LELE) [22] and Litho-Freeze-Litho-Etch (LFLE) [23] the number of features is doubled and the pitch size halved, by exposing the wafer twice with two different masks (e.g., the mask shifted by half the pitch for the second illumination), employing some memory process of the photoresist and finally developing the resist after the second illumination. Consequently, focus and especially dose variations are not correlated between these two incremental lithography steps.…”

Section: Resultsmentioning

confidence: 99%

Process Variability—Technological Challenge and Design Issue for Nanoscale Devices

et al. 2018

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Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, employ truly three-dimensional architectures. Already for aggressively scaled bulk transistors, both statistical and systematic process variations have critically influenced device and circuit performance. Three-dimensional device architectures make the control and optimization of the device geometries even more important, both in view of the nominal electrical performance to be achieved and its variations. In turn, it is essential to accurately simulate the device geometry and its impact on the device properties, including the effect caused by non-idealized processes which are subject to various kinds of systematic variations induced by process equipment. In this paper, the hierarchical simulation system developed in the SUPERAID7 project to study the impact of variations from equipment to circuit level is presented. The software system consists of a combination of existing commercial and newly developed tools. As the paper focuses on technological challenges, especially issues resulting from the structuring processes needed to generate the three-dimensional device architectures are discussed. The feasibility of a full simulation of the impact of relevant systematic and stochastic variations on advanced devices and circuits is demonstrated.

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Materials for single-etch double patterning process: surface curing agent and thermal cure resist

Cited by 11 publications

References 14 publications

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

Behavior of Lamellar Forming Block Copolymers under Nanoconfinement: Implications for Topography Directed Self-Assembly of Sub-10 nm Structures

Process Variability—Technological Challenge and Design Issue for Nanoscale Devices

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