MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors

Wu, O. K.; Rajavel, R. D.; Lyon, T. J. de; Jensen, J. Eric; Jack, Michael D.; Kosai, K.; Chapman, G. R.; Sen, Sanghamitra; Baumgratz, B. A.; Walker, B.; Johnson, B. A.

doi:10.1007/s11664-997-0182-9

Cited by 9 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In terms of material properties, HgCdTe is probably the most promising semiconductor to cover infrared to mid-infrared photodetection with a detection spectrum between 0.7 and 25 μm. APDs for photodetection at 1060, 1300, and 1550 nm have all been fabricated using liquid phase epitaxy or molecular beam epitaxy [180]- [182]. Nevertheless, integration to CMOS circuitry is more problematic as high-quality HgCdTe is usually grown on CdZnTe substrate, which is a difficult material to integrate with the silicon readout circuit due to different thermal expansion coefficients and a 19% lattice mismatch [183], [184].…”

Section: P H O T O D E T E C T O R Smentioning

confidence: 99%

The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

View full text Add to dashboard Cite

| In this paper, we present a brief history of silicon photonics from the early research papers in the late 1980s and early 1990s, to the potentially revolutionary technology that exists today. Given that other papers in this special issue give detailed reviews of key aspects of the technology, this paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success. The paper encompasses discussion of the key technology areas of passive devices, modulators, detectors, light sources, and system integration.In so doing, the paper will also serve as an introduction to the other papers within this special issue.

show abstract

Section: P H O T O D E T E C T O R Smentioning

confidence: 99%

The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Cheng et al used a solution-based process and a vapor-phase conversion method to synthesize 2D CH 3 NH 3 PbI 3 perovskites to construct a graphene/WSe 2 /perovskite/graphene heterojunction PD that showed good optoelectronic properties . Photodetectors, including those based on graphene and 2D transition-metal dichalcogenides (TMDCs), are key components in imaging, spectroscopy, chemobiosensing, and optical communication for defense and space exploration. , The drawback of commercially available PDs based on materials such as SiC, Si, − and HgCdTe is their relatively narrow spectral response within the ultraviolet (UV), visible (Vis), and infrared (IR) regimes, respectively. In many instances, when transducing light into a detectable electrical signal, it is highly desirable to have a broadband PD that operates at low power and exhibits a high photoresponsivity R and detectivity D , a fast response time τ, and a high ON/OFF ratio.…”

Section: Introductionmentioning

confidence: 99%

Inkjet-Printed Organohalide 2D Layered Perovskites for High-Speed Photodetectors on Flexible Polyimide Substrates

Min

Hossain

Adhikari

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The synthesis of solution-processed two-dimens i o n a l( 2 D ) l a y e r e d o r g a n o h a l i d e (CH 3 (CH 2 ) 3 NH 3 ) 2 (CH 3 NH 3 ) n−1 Pb n I 3n+1 (n = 2, 3, and 4) perovskites is presented, where inkjet printing was used to fabricate heterostructure flexible photodetector (PD) devices on polyimide (PI) substrates. Inks for the n = 4 formulation were developed to inkjet-print PD devices that were photoresponsive to broadband incoming radiation in the visible regime, where the peak photoresponsivity R was calculated to be ∼0.17 A/W, which is higher compared to prior reports, while the detectivity D was measured to be ∼3.7 × 10 12 Jones at a low light intensity F ≈ 0.6 mW/cm 2 . The ON/OFF ratio was also high (∼2.3 × 10 3 ), while the response time τ on the rising and falling edges was measured to be τ rise ≈ 24 ms and τ fall ≈ 65 ms, respectively. Our strain-dependent measurements, conducted here for the first time for inkjetprinted perovskite PDs, revealed that the I p decreased by only ∼27% with bending (radius of curvature of ∼0.262 cm −1 ). This work demonstrates the tremendous potential of the inkjet-printed, composition-tunable, organohalide 2D perovskite heterostructures for high-performance PDs, where the techniques are readily translatable toward flexible solar cell platforms as well.

show abstract

“…Keywords: HgCdTe, infrared detectors, interdiffused-multilayer-process molecular beam epitaxy (MBE) [1][2][3][4][5][6][7] and metalorganic vapor phase epitaxy (MOVPE). [8][9][10][11][12][13][14] There has been significant progress in MOVPE growth of high quality HgCdTe and in controlled doping with high electrical activation efficiency for both donors and acceptors.…”

Section: Introductionmentioning

confidence: 99%