MBE growth and characterization of IV–VI semiconductor thin-film structures on (110) BaF2 substrates

Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate

“…11 The laser structure consisted of 13 pairs of PbSe/PbSrSe (20 nm/30 nm) and a top and bottom optical confinement layer of PbSrSe. During the MBE growth, a Se-to-PbSe beam flux ratio of 18% for PbSe and PbSrSe layers, a Sr-to-PbSe flux ratio of 3% for PbSrSe confinement layers, and a ratio of 2.5% for PbSrSe barriers of multiple quantum well structures were maintained.…”

A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers

“…This mosaic block model is commonly applied to relaxed heteroepitaxial layers [11,12] including Ge/Si (0 0 1) [13], InAs/GaAs (0 0 1) and GaAs/InAs (0 0 1) [14], InAsP/InP (0 0 1) [15], InAs x Sb 1 À x /GaAs (0 0 1) [16], GaN/sapphire (0 0 0 1) [17], GaN/SiC (0 0 0 1) [18], ZnTe/GaAs (0 0 1) [19], ZnSe/GaAs (0 0 1) [20], and PbSe/BaF 2 (0 1 1) [21]. According to this model the dislocations broaden the X-ray rocking curve for a semiconductor crystal in two ways: (i) dislocations introduce rotations of the crystal lattice (''angular broadening''); and (ii) dislocations are surrounded by strained regions of the crystal, in which the Bragg angle is nonuniform (''strain broadening'').…”

Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

“…Considering that the lattice parameters of BaF 2 and CdTe (BaF 2 , 6.19 Å [12] ; CdTe, 6.48 Å [13] ) are close to the lattice parameter of SnTe (6.303 Å [14] ), they are widely used as substrates in MBE growth of SnTe. [15][16][17] The SnTe films grown by the MBE method mostly show hole densities of approximately 10 18 -10 21 cm À3 . [17][18][19] GaAs has established substrate treatment procedures whose thermal expansion is 5.7 Â 10 À6 K À1 , [20] and the lattice parameter is 5.65 Å.…”

“…Considering that the lattice parameters of BaF 2 and CdTe (BaF 2 , 6.19 Å [ 12 ] ; CdTe, 6.48 Å [ 13 ] ) are close to the lattice parameter of SnTe (6.303 Å [ 14 ] ), they are widely used as substrates in MBE growth of SnTe. [ 15–17 ] The SnTe films grown by the MBE method mostly show hole densities of approximately 10 18 –10 21 cm −3 . [ 17–19 ]…”