MBE growth and in situ electrical characterization of metal/semiconductor structures

Chen, L.C; Caldwell, D. A.; Müller, Timo; Finstad, T. G.; Schildgen, W; Palmstrøm, Christopher J.

doi:10.1016/s0022-0248(98)01312-8

Cited by 3 publications

(4 citation statements)

References 12 publications

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“…There is a distinct leveling in the ⌽ B IV within the bcc alloy range consistent with a constant interfacial structure. The barrier height we measured for elemental Ni ͑0.72 eV͒ corrected for image force lowering, ⌬ = 0.03 eV ͑⌽ B IV + ⌬ = 0.75 eV͒ is close to values reported for Fermi-level pinned UHV vacuum-deposited GaAs/metal diodes ͑0.77 eV͒, 5,26 but compares less well to data for electrodeposited diodes ͑0.82 eV͒. 11 This difference, however, is well within range of effects of the surface preparation and the electrodeposition potential during interface formation.…”

Section: H842supporting

confidence: 82%

“…As we observed, Ni/GaAs reacts at room temperature, whereas Fe/GaAs is in comparison more stable. 26 Annealing to 200°C is required before significant Fe-GaAs reaction is detected from either electrical or structural measurements. 3 The thickness of a ternary NiGaAs interfacial layer would be composition dependent and would contribute interfacial capacitance, as well as impact the n-type doping concentration near the interface.…”

Section: H842mentioning

confidence: 99%

“…25 The epitaxial growth of face-centered cubic ͑fcc͒ Ni on GaAs is more difficult perhaps due to the larger lattice mismatch ͑13%͒ and the higher reactivity of Ni with GaAs compared to Fe. 3,26 Pure Ni ͑fcc͒ is reported to grow with a reduced preference for ͑111͒ on ͑001͒ GaAs 17 and with a preferred ͑111͒ oriented on GaAs͑011͒ surfaces 16 but the most single crystalline epitaxy is reported when Ni is introduced with a second metal, e.g., NiCu as mentioned earlier 14 or apparently on AlGaAs substrates. 18 To reduce the lattice mismatch, these films grow with their ͗110͘ directions aligned with the GaAs͗100͘.…”

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confidence: 96%

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Epitaxial Fe[sub x]Ni[sub 1−x] Thin Film Contacts to GaAs via Electrochemistry

Bao

Majumder

Talin³

et al. 2008

J. Electrochem. Soc.

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The galvanostatic electrodeposition of epitaxial Fe x Ni 1−x films on n-GaAs͑001͒ substrates from aqueous metal ammonium sulfate solutions is reported. Structural measurements using X-ray diffraction and transmission electron microscopy indicate that the films have single crystalline or highly oriented body-centered cubic ͑bcc͒ or face-centered cubic ͑fcc͒ structure at Fe and Ni-rich compositions, respectively. The preparation of the substrate surface via ammonium hydroxide as well as the usage of an ammonium sulfate electrolyte buffer facilitates the initial nucleation of aligned metal islands on GaAs. The ratio of the Fe atomic concentration in the fcc films to that in the electrolyte is close to unity ͑1.1͒, whereas a preferential incorporation occurs for the bcc phase such that this ratio increases linearly with Fe atomic composition at a rate of 3.7. bcc Fe x Ni ͑1−x͒ /GaAs diodes have uniform Schottky barrier heights as measured by current-voltage measurements independent of Fe composition consistent with a high interfacial state density. The observed magnetic properties of Fe x Ni 1−x are consistent with single crystalline material with distributed inhomogeneities. The epitaxy via electrodeposition suggests the importance of ammonium sulfate for technical applications.

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Section: H842supporting

confidence: 82%

Section: H842mentioning

confidence: 99%

mentioning

confidence: 96%

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Epitaxial Fe[sub x]Ni[sub 1−x] Thin Film Contacts to GaAs via Electrochemistry

Bao

Majumder

Talin³

et al. 2008

J. Electrochem. Soc.

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“…19,20 By tracing this marker layer position with respect to the metal/ n-GaAs interface, the penetration depth of metal/n-GaAs interface can be monitored in situ. By incorporating an n ϩ marker layer in the MBE grown n-type GaAs buffer layer, a doping density spike will be generated in the C -V doping depth profile.…”

Section: Introductionmentioning

confidence: 99%

In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfaces

Chen

Palmstro

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMetal-semiconductor transition and magnetic properties of epitaxially grown Mn As ∕ Ga As superlattices Electrical and deep-level characterization of GaP 1 − x N x grown by gas-source molecular beam epitaxy In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces J.Heavily carbon-doped In 0.53 Ga 0.47 As on InP (001) substrate grown by solid source molecular beam epitaxy Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromideIn situ patterning and electrical characterization are used to study the electrical properties, reaction kinetics, and interface properties during reactions at Ni/n-GaAs interfaces. Ni contacts were formed in situ by deposition through a removable molybdenum shadow mask onto a GaAs͑100͒ c(4ϫ4) As-rich surface. Annealing at 300°C resulted in Ni 3 GaAs formation. Subsequent exposure of the Ni 3 GaAs to an As 4 flux at 350°C resulted in the formation of NiAs at the surface and the epitaxial regrowth of GaAs at the Ni x GaAs/GaAs interface. The GaAs regrowth thickness and the regrown GaAs electrical properties were determined electrically by in situ capacitance-voltage and currentvoltage measurements. An interlayer model was applied to explain the Schottky barrier height discrepancy between capacitance-voltage and current-voltage measurements for metal/GaAs contacts with regrown GaAs. The model predicts that the regrown GaAs interlayer is p type with a hole concentration of ϳ3ϫ10 15 holes/cm 3 .

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