Impurity-bound
excitons in ZnSe quantum wells are bright single-photon
emittersa crucial element in photonics-based quantum technology.
However, to achieve the efficiencies required for practical applications,
these emitters must be integrated into optical cavities that enhance
their radiative properties and far-field emission patterns. In this
work, we demonstrate cavity-enhanced emission from a single impurity-bound
exciton in a ZnSe quantum well. We utilize a bullseye cavity structure
optimized to feature a small mode volume and a nearly Gaussian far-field
transverse mode that can efficiently couple to an optical fiber. The
fabricated device displays emission that is more than an order of
magnitude brighter than bulk impurity-bound exciton emitters in the
ZnSe quantum well, as well as clear antibunching, which verifies the
single-photon emission from the source. Time-resolved photoluminescence
spectroscopy reveals a Purcell-enhanced radiative decay process with
a Purcell factor of 1.43. This work paves the way toward high-efficiency
spin-photon interfaces using an impurity-doped II–VI semiconductor
coupled to nanophotonics.