Wide-gap II/VI heterostructures (HS) and quantum wells (QW) composed of ZnSe, CdSe, MgSe, and their ternary and quaternary compounds are attractive candidates for modern quantum optical devices such as single photon sources and optically controlled spin qubits in the visible spectral range. In contrast to similar III/V semiconductor based devices, generally, most of the II/VI compounds allow for isotope purification toward zero-nuclearspin species in the semiconductor environment. Using the same molecular beam epitaxy (MBE) system for natural and isotopically purified materials opposes the challenge of achieving superior isotope purity, for example, of Zn and Se species on the background of operation of the other effusion cells filled with natural isotopes. Here we report on the crystallographic and optical properties of ZnMgSe/ZnSe heterostructures and quantum wells grown by using 64 Zn and 80 Se isotopes and Mg with natural isotope distribution. We present a detailed quantitative secondary ion mass spectrometry (SIMS) analysis, which confirms that an extremely high grade of isotope purification of the ZnSe can be maintained, although natural and enriched Zn and Se elements are used in the same MBE system. This pioneering growth study forms a solid base to generate a spin vacuum ZnSe host crystal that is particularly suited for future studies on the dynamics of localized spins in II/VI heterostructures on a strongly extended coherence time scale.

In this work it is studied the influence of different texturizations on minority carrier lifetime of n-type Fz silicon wafers passivated with thin amorphous silicon layers (a-Si:H). For amorphous-crystalline silicon based heterojunction solar cells a good light trapping is essential. Therefore a front side texturization is needed as it can increase the photocurrent due to its low reflectance. The interface between the amorphous emitter and the crystalline base plays an important role for two reasons: firstly, the micromorphic surface topology can generate different deposition regimes that results in different lifetimes, and secondly, the nanomorphic structure also show influences on the lifetime. We compare two different types of wet chemical texturizations by different carbonate solutions and a plasma texturization subsequently covered by a thin layer of a-Si:H by means of plasma-enhanced chemical vapor deposition. The surface morphology produced by the texturization on the silicon wafers is analyzed by scanning electron microscopy and atomic force microscopy. The quality of the passivation of the textured silicon surface by the a-Si:H deposition is evaluated by measuring minority carrier lifetimes with a microwave photo-conductance decay and quasi steady state photo-conductance devices

Although the research in non-intrusive techniques for the measurement of vibration have made major progress since the beginning in the 1960’s, they are still mainly used as additional tool to the common strain gauges. Therefore, there is still a great deal of interest in the improvement of such non-contact vibration measurement techniques, to replace the intrusive ones with alternative techniques. One possibility to monitor all blades at once is blade tip-timing. The probes for a blade tip-timing measurement system are mounted circumferentially in the engine casing to log the passing times of the rotor blades. These logged time data will be compared with theoretically calculated passing times. The deviation between measured and calculated passing times can be transformed to blade displacement values. In recent years, several methods to analyse the acquired vibration data have been developed and improved. They are directed to evaluate synchronous and asynchronous blade vibration events. This paper focuses on the identification of asynchronous vibrations on rotor blades using blade tip-timing. Taking the data from all probes into account gives an opportunity to determine the vibration of each single blade. Due to the usage of a research test rig, all measurement data could be acquired in simulated real case operation scenarios. Analysis data were evaluated with a developed post processing routine based on a Fourier transformation algorithm coupled with a least square fitting procedure. Since compressor surge represents one of the most critical non synchronous events during compressor operation, in this paper a special interest is paid to the analysis of compressor surges. Vibration frequencies revealed during surge investigation will be compared with simultaneously measured strain gauge data to ensure the reliability of blade tip-timing measurement and analysis. To explain the results in more detail, the possibility of a blade damaged triggered shift of the blade characteristic frequency is shown. The most promising result of the analysis is the close correlation between the identified vibration frequencies of compressor surge events and the afterwards determined frequency mistuning and crack distributions. Blade damage becomes visible through increasing deviation between characteristic frequencies of different blades as result of multiple surge events. In addition, with the comparison of mean frequency records over each single surge among each other it is possible to restrict the blade damage time. Subsequently, the possibility to develop a process routine to predict blade damage during compressor test series could arise.

We report on 0.93 eV luminescence observed in multicrystalline silicon. The spectral line is close to the well known D3 one, but its properties are different. The new feature shows a remarkable intensity at room temperature, exceeding the intensity of the band to band radiative transition. Moreover, it appears as a single line in the entire temperature range 10-300K, in contrast to the D3, which is usually accompanied by D4. Cathodoluminescence (CL) and electron beam induced current (EBIC) micrographs revealed that the centers causing 0.93 eV emission are irregularly distributed along certain grain boundaries. Electron backscattering diffraction examination showed that the 0.93 eV luminescence appears at grain boundaries characterized by a lattice rotation around a <344> axis. The EBIC contrast at those irregularities indicates strong total recombination. Based on an analysis of the temperature dependence of the CL intensity and the EBIC contrast we obtained an activation energy of about 120 meV.