MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

Lachab, M.; Khanna, Suraj P.; Harrison, P.; Linfield, E. H.; Čerškus, Aurimas; Kundrotas, J.; Seliuta, D.; Valušis, Gintaras

doi:10.1016/j.jcrysgro.2010.02.018

Cited by 6 publications

(8 citation statements)

References 30 publications

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“…In fact, the strategies to preserve the optical absorption properties: (1) It needs strict control of bidimensional density variation, and (2) it is recommended high densities of the doped delta wells, in the case of the fluctuated applied electric field. Finally, the obtained results indicate clearly that studying the different kinds of structural disorders is important to determine the degree of sensitivity of the optical properties, and it will be helpful to design and manufacture in large scales nano-optoelectronic devices used in terahertz technology [11,14,15,50] and based on DDQW.…”

Section: Discussionmentioning

confidence: 87%

“…Furthermore, THz technology has promising applications in emerging healthcare fields, encompassing medical imaging, biology, material spectroscopy, sensing, telemedicine, and telerobotic surgery [12,13]. Additionally, it is noteworthy that THz photodetectors, based on intersubband transitions play a crucial role in a wide range of THz applications [14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the electric field provokes a moderate and the incident laser generates an ineffective impact on the optical absorption properties (OAPs). This work can be a route to design and manufacture in large scales optoelectronic devices used in terahertz technology [11,14,15,50] and based on DDQWs that require the preservation of good OAPs.…”

Section: Introductionmentioning

confidence: 99%

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Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

Noverola-Gamas,

Macias Rojas,

Azalim

et al. 2023

J. Phys.: Condens. Matter

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The inevitable structural disorder associated with the fluctuation of the applied external electric field, laser intensity, and bidimensional density in the low dimensional quantum system can affect noticeably optical absorption properties and the related phenomena. In this work, we study the effect of structural disorder on the optical absorption properties in delta-doped quantum wells (DDQWs). Starting from effective mass approximation and the Thomas-Fermi approach as well as using the matrix density, the electronic structure and the optical absorption coefficients of DDQWs are determined. It is found that the optical absorption properties depend on the strength and the type of structural disorder. Particularly, the bidimensional density disorder suppresses strongly the optical properties. Whilst, the disordered external applied electric field fluctuates moderately in the properties. In contrast, the disordered laser holds absorption properties unalterable. So, our results specify that to have and preserve good optical absorption properties in DDQWs, requires precise control of the bidimensional. Besides, the finding may improve the understanding of the impact of the disorder on the optoelectronic properties based on DDQWs.

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Section: Discussionmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

Noverola-Gamas,

Macias Rojas,

Azalim

et al. 2023

J. Phys.: Condens. Matter

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“…18 Doped GaAs/AlAs QWs, both p-and n-type, can also be used for fast and broadband THz sensing applications through horizontal carrier transport effects. 19,20 It is well known that impurities in QWs may be distributed smoothly, be tailored to exhibit specific doping profiles, or be concentrated in a sheet, forming so-called d-doped layer. Nature of the doping in QWs is influenced by the quantum well width, barrier height, impurity position, and concentration.…”

Section: Introductionmentioning

confidence: 99%

Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition

Palenskis

Matukas

Pralgauskaitė

et al. 2013

Journal of Applied Physics

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Noise properties of beryllium delta-doped GaAs/AlAs multiple quantum wells, doped both above and below the Mott transition, are studied within the frequency range of 10 HzÀ20 kHz and at temperature from 77 K to 350 K. It is shown that the generation-recombination noise in structures close to the Mott transition exhibits two peaks-a frequency and temperature-dependent peak between 120 and 180 K and a broadband, frequency-and temperature-nearly independent peak around 270 K. Activation energies are estimated; origin of the broadband maximum is attributed to holes tunnelling into defect trap states located in the AlAs barrier/GaAs quantum well interface.

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“…Impurity related electronic and optical properties of quantum wells have attracted a lot of interest in recent years 1–6 due to their potential THz applications. The presence of impurities in a quantum well brings on localized states below the edge of the first subband in the quantum well 7, 8.…”

Section: Introductionmentioning

confidence: 99%

Effects of magnetic field on the terahertz nonlinear optical properties in donor‐doped GaAs/AlGaAs quantum wells

Yıldırım

Aslan

2012

Physica Status Solidi (b)

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Effects of the magnetic field on nonlinear optical properties at THz range in GaAs/AlGaAs quantum wells doped with donor atoms are investigated. Expressions for the third‐order nonlinear optical susceptibilities are obtained through the solution of the density matrix equations of motion within the rotating wave approximation. Donor binding energies are calculated variationally by means of an iterative shooting algorithm. Magnetic field has strong effect on the nonlinear susceptibility: it removes the degeneracy in energies of 2p± impurity states and increases the absolute value of the nonlinearity. It is also shown that a large and tunable optical nonlinear figure of merit is possible with the magnetic field applied in the growth direction. The nonlinear optical quantities are also calculated for donor distributions with different full width at half maximum values in the absence of magnetic field and the observed features at low energy part are attributed to the increasing homogeneity in the donor distribution.

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MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

Cited by 6 publications

References 30 publications

Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition

Effects of magnetic field on the terahertz nonlinear optical properties in donor‐doped GaAs/AlGaAs quantum wells

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