MBE Growth of CdTe/ZnTe Quantum Dots with Single Mn Ions

Gietka, Karol; Kobak, J.; Rousset, J.-G.; Janik, E.; Słupiński, T.; Kossacki, P.; Golnik, A.; Pacuski, W.

doi:10.12693/aphyspola.122.1056

Cited by 5 publications

(3 citation statements)

References 10 publications

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“…23. The QD layer with a planar QD density of 5 · 10 9 /cm 2 , buried 100 nm below the sample surface, is doped with a very low density of Mn 2+ ions.…”

Section: 22mentioning

confidence: 99%

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Single-color, in situ photolithography marking of individual CdTe/ZnTe quantum dots containing a single Mn2+ ion

Sawicki

Malinowski

Gałkowski

et al. 2015

Applied Physics Letters

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A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard micro-photoluminescence spectroscopy. Its utility is proven by a systematic magnetooptical study of a single CdTe/ZnTe QD containing a Mn 2+ ion, where a magnetic field of up to 10 T in two orthogonal, Faraday and Voigt, configurations is applied to the same QD. The presented approach can be applied to a wide range of solid state nanoemitters.PACS numbers: 75.50. Pp, 75.30.Hx, 78.20.Ls, 71.35.Ji Semiconductor quantum dots (QDs) hold great potential for valuable applications in modern optoelectronics.For instance, they act as optically 1,2 or electrically 3 pumped, highly efficient on-demand singlephoton sources for possible applications in, e.g., quantum information processing schemes.4 As demonstrated recently, 5-9 embedding a magnetic dopant (e.g., a Mn or Co ion) in the QD further enhances its potential for device implementations. Thanks to the s,p-d exchange coupling between a magnetic ion and the carriers confined to the QD, an efficient all-optical manipulation 7-9 and readout 5-9 of the ion's spin projection becomes possible, a milestone in the development of the emerging field of solotronics, that is electronics exploiting quantum properties of individual electrons, ions or defects. 9,10Since QDs are typically randomly distributed in a semiconductor matrix, permanent marking of their position is an indispensable prerequisite for fabrication of any kind of functional device, as well as for any systematic research involving QDs. Several approaches have been utilized so far for high accuracy positioning of individual solid-state nano-emitters, such as QDs or luminescent nanocrystals.11-18 The most efficient ones combined either in situ optical lithography with microphotoluminescence (µ-PL) 13 or, offering even higher spatial resolution, in situ electron beam lithography with cathodoluminescence.18 The optical method (Ref. 13) involved two laser beams of different wavelengths (twocolor method ). The first beam served for determination of the position of the selected QD through µ-PL mapping. Its energy was low enough to avoid exposure of a positive photoresist film deposited on the sample surface. The second laser beam, sharing the same optical path as the first one and of energy high enough to expose the photoresist, was switched on once the QD position was determined. As a result, a mark centered above the selected QD was obtained on the sample surface after the photoresist development. The method has proved its extraordinary efficiency for the production of deterministically coupled (In,Ga)As/GaAs QD -microcavity optical mode devices. 13,19,20 The performance of the method is still limited, however, by the necessity of a precise alignment of the two laser beams and of an overlap of their focused spots on the sample surface. In this letter, we present a scalable method for the pho...

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“…23. The QD layer with a planar QD density of 5 · 10 9 /cm 2 , buried 100 nm below the sample surface, is doped with a very low density of Mn 2+ ions.…”

Section: 22mentioning

confidence: 99%

“…21,22 The samples containing self-assembled CdTe QDs embedded in a ZnTe barrier are grown by Molecular Beam Epitaxy on a GaAs substrate, as described in Ref. 23. The QD layer with a planar QD density of 5 • 10 9 /cm 2 , buried 100 nm below the sample surface, is doped with a very low density of Mn 2+ ions.…”

mentioning

confidence: 99%

Single-color, in situ photolithography marking of individual CdTe/ZnTe quantum dots containing a single Mn2+ ion

Sawicki

Malinowski

Gałkowski

et al. 2015

Applied Physics Letters

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“…4 b). These nanostructures are particularly interesting for applications in the yellow range optoelectronics (λ = 575 − 595 nm), and also for fundamental studies of nanostructures exhibiting magneto-optical features [24,26,27,28,29]. Since CdSe is also lattice matched to ZnTe, we also have grown a CdSe/(Cd,Mg)Se QW emitting at λ ≈ 720 nm.…”

Section: Mixed Selenium and Tellurium Materials Systemmentioning

confidence: 99%

MBE grown microcavities based on selenium and tellurium compounds

Rousset¹,

Kobak²,

Janik³

et al. 2014

Journal of Crystal Growth

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In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength from 540 to 760 nm.

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