Coupling of quantum emitters in a semiconductor relies, generally, on short-range dipole-dipole or electronic exchange type interactions. Consistently, energy transfer between exciton states, that is, electron-hole pairs bound by Coulomb interaction, is limited to distances of the order of 10 nm. Here, we demonstrate polariton-mediated coupling and energy transfer between excitonic states over a distance exceeding 2 μm. We accomplish this by coupling quantum well-confined excitons through the delocalized mode of two coupled optical microcavities. Use of magnetically doped quantum wells enables us to tune the confined exciton energy by the magnetic field and in this way to control the spatial direction of the transfer. Such controlled, long-distance interaction between coherently coupled quantum emitters opens possibilities of a scalable implementation of quantum networks and quantum simulators based on solid-state, multi-cavity systems.
Lasing relies on light amplification in the active medium of an optical resonator. There are three lasing regimes in the emission from a quantum well coupled to a semiconductor microcavity. Polariton lasing in the strong light-matter coupling regime arises from the stimulated scattering of exciton-polaritons. Photon lasing in the weak coupling regime relies on either of two mechanisms: the stimulated recombination of excitons, or of an electron-hole plasma. So far, only one or two out of these three regimes have been reported for a given structure, independently of the material system studied. Here, we report on all three lasing regimes and provide evidence for a three-threshold behavior in the emission from a photonic trap in a Se/Te-based planar microcavity comprising a single CdSe/(Cd,Mg)Se quantum well. Our work establishes the so far unsettled relation between lasing regimes that differ by their light-matter coupling strength and degree of electron-hole Coulomb correlation.
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