MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages

Mamutin, V. V.; Vekshin, V. A.; Davydov, V. Yu.; Ратников, В. В.; Shubina, T. V.; Иванов, С. В.; Kop’ev, P. S.; Karlsteen, M.; Söderwall, U.; Willander, Magnus

doi:10.1002/(sici)1521-396x(199911)176:1<247::aid-pssa247>3.0.co;2-i

Cited by 43 publications

(26 citation statements)

References 14 publications

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“…Significant progress has been made recently in the nitrogen RF plasma source molecular beam epitaxy (RFMBE) of InN [1][2][3][4][5][6], inspired by the recent re-evaluation of the InN bandgap from 1 to $0.7 eV [7]. However, the InN material quality is still inadequate for device applications and many aspects of the growth process and the material properties are not clear.…”

Section: Introductionmentioning

confidence: 99%

Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)

Dimakis

Tsagaraki

Iliopoulos

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)

Dimakis

Tsagaraki

Iliopoulos

et al. 2005

Journal of Crystal Growth

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“…15͒ and are in general slightly better than those realized for In-face InN. 14,25 The significance of choosing optimum conditions of low growth temperature and In-rich conditions for the optical properties of N-face InN is illustrated in Fig. 2.…”

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confidence: 99%

Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

Koblmüller

Gallinat

Bernardis

et al. 2006

Applied Physics Letters

109

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The authors demonstrate the impact of growth kinetics on the surface and structural properties of N-face InN grown by molecular beam epitaxy. Superior surface morphology with step-flow growth features is achieved consistently under In-rich conditions in a low-temperature region of 500–540°C. Remarkably, off-axis x-ray rocking curve (ω scans) widths are found to be independent of the growth conditions. The band gap determined from optical absorption measurements of optimized InN is 0.651eV, while photoluminescence peak emission occurs at even lower energies of ∼0.626eV. Hall measurements show room temperature peak electron mobilities as high as 2370cm2∕Vs at a carrier concentration in the low 1017cm−3 region. Analysis of the thickness dependence of the carrier concentration demonstrates a n-type surface accumulation layer with a sheet carrier concentration of ∼3×1013cm−2.

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“…A set of In x Ga 1--x N alloys (0.36 < x < 1) was grown by plasma-assisted molecularbeam epitaxy under the conditions similar to those for InN [5]. Only a hexagonal structure was established by X-ray and Raman measurements in the InN and In x Ga 1--x N alloys.…”

mentioning

confidence: 99%

Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

Davydov

Klochikhin

Емцев

et al. 2002

phys. stat. sol. (b)

298

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MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages

Cited by 43 publications

References 14 publications

Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)

Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)

Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

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