MBE growth of MgS nanowires characterized using AFM

Metastable II–VI sulphides: Growth, characterization and stability

“…[34,35]. AFM has been used to observe the evolution of these wires on layers protected from oxidation with caps of ZnSe a few nm thick, and a group of wires on an MgS surface is shown in Fig.…”

“…Wire development has been studied on MgS surfaces as a function of layer thickness and ZnS:Mg flux ratio [35]. Wires start to form in layers less than 20 nm thick, and sometimes isolated wires are found in layers as thin as 10 nm.…”

A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

“…3b demonstrates the effect of replacing the ZnMgSSe by a layer of MgS layer of a similar thickness. Here, the MgS layer is seen to display pronounced 1D ridges, which are characteristic of MgS surfaces under a wide range of growth conditions [17], but have never been observed on Zn 0.2 Mg 0.8 S 0.64 Se 0.36 surfaces at any thickness. We have previously suggested that the nanowires arise from a partial anisotropic relaxation occurring in thicker MgS layers [14,18] and their absence in the quaternary alloy is further evidence that these structures are pseudomorphic.…”