MBE growth of PbSe/CaF2/Si(1 1 1) heterostructures

McCann, Patrick J.; Fang, X. M.; Liu, W.K.; Strecker, B. N.; Santos, M. B.

doi:10.1016/s0022-0248(96)00913-x

Cited by 29 publications

(14 citation statements)

References 16 publications

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“…HF(10%) dip. This produces a hydrogen-passivated Si surface [11] which can be thermally cleaned at temperatures as low as 500'C, thereby minimizing undesirable interfacial reactions arising from the high Se background [12].…”

Section: Introductionmentioning

confidence: 99%

Observation of Rheed Intensity Oscillations During PbSe/CaF₂/Si(111) MBE

et al. 1996

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RHEED intensity oscillations observed during MBE growth of CaF 2 on Si(1 11) and PbSe on CaF 2 /Si(1 11) are presented. The effects of substrate temperature and initial nucleation procedure are investigated. Strong temporal oscillations of the specular beam intensity are found to be most readily observed at temperatures below 200'C for both CaF 2 and PbSe. Growth rates measured as a function of cell temperatures exhibit Arrhenius behavior with activation energies of 5.0 eV and 1.93 eV for CaF 2 and PbSe, respectively. The relatively high activation energy obtained for CaF 2 is consistent with the high melting point and sublimation energy of ionic fluorides.

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Section: Introductionmentioning

confidence: 99%

Observation of Rheed Intensity Oscillations During PbSe/CaF₂/Si(111) MBE

et al. 1996

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“…IV-VI semiconductor heterostructures were grown by MBE on (111)-oriented Si substrates using techniques described previously [10]. Sample M141 consisted of a Bi-doped 1.50 μm thick layer of binary PbSe between the silicon growth substrate and the PbSrSe/PbSe/PbSrSe MQW PL emitting layer.…”

Section: Methodsmentioning

confidence: 99%

Cross-plane thermal conductivity temperature dependence for PbSnSe/PbSe thin film superlattice material from 100K to 300K

et al. 2013

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The temperature dependence of cross-plane lattice thermal conductivity for thin film IV-VI semiconductors grown by molecular beam epitaxy was measured. Samples consisting of PbSe/PbSrSe multiple quantum wells (MQWs) on PbSe/PbSnSe superlattices (SLs) were grown with variations in SL layer thickness and the number of SL pairs. Localized lattice temperatures within the MQW layers were extracted from analysis of continuous wave photoluminescence (PL) emission spectra at heat sink temperatures between 100 K and 250 K. These data, finite element analysis, and electrical characterization were used to determine cross-plane lattice thermal conductivity of two different SL materials. A SL material with three different

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“…9 Si wafers were outgassed in the buffer chamber at 200°C for one hour before loaded into the growth chamber. Three-in-diam p ϩ -type ͑0.005-0.025 ⍀ cm͒ and n ϩ -type ͑0.001-0.004 ⍀ cm͒ Si wafers with offcut angles less than 0.3°were cleaned using a modified Shiraki method followed by dipping in a HF solution.…”

Section: Mbe Growth Proceduresmentioning

confidence: 99%

“…9 All CaF 2 layers were grown on thermally cleaned Si͑111͒ at 700°C. This cell temperature produces a beam equivalent pressure ͑BEP͒ for CaF 2 of 6.4ϫ10 Ϫ8 Torr and a growth a͒ Corresponding author; electronic mail: fang@phyast.nhn.ou.edu rate of 0.007 ML/s calibrated from reflection high-energy electron diffraction ͑RHEED͒ intensity oscillation experiments.…”

Section: Mbe Growth Proceduresmentioning

confidence: 99%

Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)

Fang

Chao

Strecker

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy Appl.We report results on the incorporation of Bi ͑n type͒ and Tl ͑p-type͒ impurity in PbSe and PbEuSe grown on CaF 2 /Si͑111͒ by molecular beam epitaxy. Bi 2 Se 3 and Tl 2 Se were used as sources of dopants in the growth. Electron concentrations in the low 10 19 cm Ϫ3 range and hole concentrations in the middle 10 18 cm Ϫ3 range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and hole mobilities are comparable to those for PbSe and PbEuSe grown on BaF 2 .

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MBE growth of PbSe/CaF2/Si(1 1 1) heterostructures

Cited by 29 publications

References 16 publications

Observation of Rheed Intensity Oscillations During PbSe/CaF₂/Si(111) MBE

Observation of Rheed Intensity Oscillations During PbSe/CaF₂/Si(111) MBE

Cross-plane thermal conductivity temperature dependence for PbSnSe/PbSe thin film superlattice material from 100K to 300K

Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)

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MBE growth of PbSe/CaF2/Si(1 1 1) heterostructures

Cited by 29 publications

References 16 publications

Observation of Rheed Intensity Oscillations During PbSe/CaF2/Si(111) MBE

Observation of Rheed Intensity Oscillations During PbSe/CaF2/Si(111) MBE

Cross-plane thermal conductivity temperature dependence for PbSnSe/PbSe thin film superlattice material from 100K to 300K

Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)

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Observation of Rheed Intensity Oscillations During PbSe/CaF₂/Si(111) MBE

Observation of Rheed Intensity Oscillations During PbSe/CaF₂/Si(111) MBE