MBE growth of self-assisted InAs nanowires on graphene

Abstract

Abstract. Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived.

Patterned tungsten disulfide/graphene heterostructures for efficient multifunctional optoelectronic devices

“…Synthesis and patterned masking of graphene EG was grown on nominally on-axis high purity semi-insulating (HPSI) 4H-SiC(0001) substrates (CREE, Inc.) by adapting the approach reported by Emtsev and coworkers 23 in an Aixtron HT-BM reaction chamber. 24 Before proceeding with WS 2 growth, the areas of graphene where contacts shall be subsequently deposited were masked by evaporating 100 nm of gold (Au) ( Fig. 1(a)).…”

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

“…[ 39 ] They are a perfect candidate for Majorana fermions investigations owing to their large Landé g‐factor, strong spin‐orbit coupling, and Fermi level pinning in the conduction band. [ 40,41 ] On the other hand, GaAs has a direct bandgap and high electron mobility and is the most technologically important compound semiconductor material [ 42 ] with highly promising applications in lasers and photodetectors. [ 43 ] Similarly, the GaN material is one of the highly interesting and appealing semiconductors for use in high‐frequency and high‐power devices, light‐emitting diodes and lasers owing to its exceptional optical, and electrical properties.…”

“…Adatom mobility on graphene is significantly influenced by the nature and thickness of the graphene [ 40,47 ] due to differences in the stability of adatom binding at the graphene edge sites. It is therefore, crucial to investigate the impact of the graphene surface on NWs growth.…”

Электрические свойства GaAs нитевидных нанокристаллов, выращенных на гибридных подложках графен/SiC

“…Так, например, недавно была продемонстрирована принципиальная возможность выращивания массивов GaAs ННК на подложках мультиграфен (3−5 слоев)/SiC [9]. Также была продемонстрирована возможность выращивания на таких подложках GaN и InAs ННК [10,11]. Тем не менее, очевидно, что электрические свойства приборов на основе массивов вертикально стоящих ННК во многом будут определяться параметрами электрических контактов к ним.…”

“…3 также следует, что при росте ННК на поверхности подложки происходило образование дополнительного смачивающего GaAs-слоя толщиной до 300 нм. При этом на топографии GaAs-слоя можно выделить полосы, направление которых совпадает с направлением террас на изначальной подложке.Ранее было показано, что A III B V ННК на поверхности подложек SiC c слоями графена растут вдоль направлений, перпендикулярных поверхности[9][10][11]. Кроме того, в ряде работ наблюдался преимущественный рост ННК в областях с несколькими слоями графена по сравнению с монослойными участками[15,16].…”