MBE HgCdTe on Alternative Substrates for FPA Applications

Li, He; Fu, Xiangliang; Quan, Wei; Wang, Weiqiang; Lu, Chunmei; Wu, Yan; Hu, Xiaoning; Yang, Jing; Zhang, Qin-Yao; Ding, Ran; Chen, Xiaoshuang; Lü, Wei

doi:10.1007/s11664-008-0441-4

Cited by 33 publications

(10 citation statements)

References 26 publications

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“…However, it should be noted that a small decrease in FWHM values with increasing layer thickness is expected. 1 Nonetheless, the observed 78-98 arc-s difference in the FWHM values for 2.34-2.54 lm thick layers is not solely related to the thickness difference of the CdTe layers. An XRD rocking curve FWHM value of 138.1 arc-s for the 2.54-lm layer was obtained using cyclic annealing during CdTe growth.…”

Section: Resultsmentioning

confidence: 80%

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MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

Arı

Bilgilisoy

Ozceri

et al. 2016

Journal of Elec Materi

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Molecular beam epitaxy (MBE) growth of thin ($2 lm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As 4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 9 10 6 cm À2 for 2.54 lm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

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Section: Resultsmentioning

confidence: 80%

“…This value is in good agreement with the best reported FWHM values for this thickness. 1 To further characterize the crystal quality of CdTe layers, Everson-type etching was applied to the samples. Figure 6 shows the post-Everson etching SEM images of CdTe layers grown on thermally deoxidized GaAs substrates (Fig.…”

Section: Resultsmentioning

confidence: 99%

MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

Arı

Bilgilisoy

Ozceri

et al. 2016

Journal of Elec Materi

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“…This means the as-grown surface defects were not due to substrate oxide removal before the growth, but were related to growth conditions. 1 The triangular-and trapezoid-like shapes of the etch pits are due to preferential etching in some certain crystal orientations.…”

Section: Resultsmentioning

confidence: 99%

“…Besides being extremely expensive, it has large thermal mismatch with Si readout integrated circuits (ROICs) and is a very brittle material. 1 On the other hand, alternative substrates have been widely studied especially for molecular beam epitaxy (MBE) growth of HgCdTe. 2 Among these, Si and GaAs are the most promising, with tremendous progress having been made in recent years.…”

Section: Introductionmentioning

confidence: 99%

Characterization of CdTe Growth on GaAs Using Different Etching Techniques

Bilgilisoy

Özden

Bakali

et al. 2015

Journal of Elec Materi

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CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle-and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 9 10 7 cm À2 to 2 9 10 8 cm À2 range, and trapezoid-shaped etch pits were found in the 1 9 10 7 cm À2 to 7 9 10 7 cm À2 range for samples with thicknesses <2 lm.

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“…Initially, the method of dislocation reduction was mainly studied by means of step-down interface energy, such as lattice graded epilayer, tilted growth orientation, lattice-matched compound buffer [5]- [7] . After that, a plenty of researches showed great interest in thermal annealing process [8]- [10] .…”

Section: Introductionmentioning

confidence: 99%

Effects of thermal annealing on HgCdTe/CdTe/Si(211) by MBE

Shen

Fu³

et al. 2011

SPIE Proceedings

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In this paper, the effects of thermal annealing (TA) were studied by theoretical calculation and experiment. The calculation was based on the Masafumi's model of dislocation movement, modified with thermal stress and lattice-mismatch in the HgCdTe/CdTe/Si(211) heterostructure. As the calculation indicated, the temperature and holding time of TA had great effect on the dislocation reduction, while less improvement with the epilayer thickness and growth orientation. Upon the result of calculation, the TA and thermal cycle annealing (TCA) experiments were performed under different conditions, which fit the calculation properly. The dislocation reduction of TA was investigated by double crystal X-ray rocking curve (DCRC) and etch pit density (EPD) measurements. The EPD of 10μm SW~LW HgCdTe/Si under optimized thermal process could be decreased half order of magnitude, with the lowest EPD at 2×10 6 cm -2 , as well as the full width at half maximum (FWHM) of the DCRC to 57.8 arcsec.

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MBE HgCdTe on Alternative Substrates for FPA Applications

Cited by 33 publications

References 26 publications

MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

Characterization of CdTe Growth on GaAs Using Different Etching Techniques

Effects of thermal annealing on HgCdTe/CdTe/Si(211) by MBE

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