MCM substrate with high capacitance

Kambe, R.; Imai, Ryo; Takada, Toshikatsu; Arakawa, Mariko; Kuroda, Masao

doi:10.1109/96.365477

Cited by 17 publications

(4 citation statements)

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“…[1][2][3][4] This material is characterized with a high dielectric constant (⑀ϭ20-35) and good dielectric breakdown strength. The properties of tantalum oxide thin films prepared by various techniques have been extensively investigated in terms of microstructure, stoichiometry, chemical binding states, capacitance-voltage characteristics, and electrical properties.…”

mentioning

confidence: 99%

X-ray photoelectron spectroscopy study of Al/Ta2O5 and Ta2O5/Al buried interfaces

Chen

Yang

Nielsen

et al. 1997

Applied Physics Letters

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Buried interfaces of thin Al/Ta2O5 and Ta2O5/Al films were studied using the x-ray photoelectron spectroscopy technique. The peak decomposition technique was employed to identify the composition and chemical states at the interface region. It was observed that there is an “intermixing layer” at the Al/Ta2O5 interface, where Ta2O5 has been reduced to lower binding energy states due to the reaction of Al with Ta2O5 during deposition. On the other hand, the Ta2O5/Al interface is relatively stable, consisting of Ta2O5 and Al2O3 interfacial layers. Based on a uniform multilayer structure model, the thickness of the interfacial layers was estimated by using the relative photoelectron intensities.

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mentioning

confidence: 99%

X-ray photoelectron spectroscopy study of Al/Ta2O5 and Ta2O5/Al buried interfaces

Chen

Yang

Nielsen

et al. 1997

Applied Physics Letters

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“…This is a consequence of mismatches resulting from the decrease in o Z . The temperature dependence of r ε and δ tan for singlecrystal SrTiO3 ferroelectric material has been reported by Krupka et al [15] and is summarized in Table 2. 6 shows the variation of resonance frequency with the temperature which is very attractive at very low temperatures.…”

Section: Adding Ferroelectric Materialsmentioning

confidence: 87%

“…The modified microstrip structure of Fig.2 consists of a dielectric substrate (e.g., LAO or MgO, typically 254 to 500 m μ thick, we will use LAO with permittivity 23.6) [15], a ferroelectric thin-film layer (thickness " ferro t " varying between 300 and 2000 nm for various applications), a gold or YBCO thin film (2 m μ thick or 300-600 nm thick, respectively) for the top conductor, and a 2 m μ thick gold ground plane. The STO film is a lossy dielectric which has a complex permittivity with a dielectric constant r ε and a loss tangent δ tan .…”

Section: Adding Ferroelectric Materialsmentioning

confidence: 99%

Tunable and adaptive LHM ZOR using a nonlinear dielectric thin film of STO

Mansour

Elmala

Shalaby³

et al. 2013

2013 Saudi International Electronics, Communications and Photonics Conference

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In this paper, we propose a tunable CRLH ZOR based on the latest resurgent of ferroelectric materials. It is known that for most resonant structures, attainment of optimal performance requires some level of additional tuning through either mechanical means or other coupling mechanisms. Therefore, incorporation of electronic tuning into HTS components with-out degradation of performance is very attractive. The result will be low-loss microwave components that could be finetuned for optimal performance, with the additional attribute of being tunable over a broadband frequency range. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The ZOR is designed, and simulated by the full-wave analysis software. The response shows a variation of electromagnetic characteristics with the applied electric field, ferroelectric thickness and the operating temperature.

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“…Through the series capacitors, tuning is accomplished, although tuning the capacitance and shunt inductance [30] simultaneously would be advantageous in maintaining the impedance match for critical requirements. Cables, the introduction of RF capacitive bases, decoupled capacitors [31], or more complicated networks trace the DC bias of the reported structures.…”

Section: Tunable Composite Right/left-handed Transmission Lines Using Ferroelectric Thin Filmsmentioning

confidence: 99%

Tunable Zeroth-Order Resonator Based on Ferroelectric Materials

Mansour¹,

Kanaya²

2021

Multifunctional Ferroelectric Materials

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Tunable microwave devices have the benefits of added functionality, smaller form factor, lower cost, and lightweight, and are in great demand for future communications and radar applications as they can extend the operation over a wide dynamic range. Current tunable technologies include several schemes such as ferrites, semiconductors, microelectromechanical systems (MEMS), and ferroelectric thin films. While each technology has its own pros and cons, ferroelectric thin film-based technology has proved itself as the potential candidate for tunable devices due to its simple processes, low power consumption, high power handling, small size, and fast tuning. A tunable Composite Right Left-Handed Zeroth Order Resonator (CRLH ZOR) is introduced in this chapter and it relies mainly on the latest advancement in the ferroelectric materials. It is common that for achieving optimum performance for the resonant structure, this involves the incorporation of an additional tuning by either mechanical means (i.e. with tuning screws) or other coupling mechanisms. The integration between electronic tuning and High-Temperature Superconducting (HTS) components yields a high system performance without degradation of efficiency. This leads not only low-loss microwave components that could be fine-tuned for maximum efficiency but will provide a tunable device over a broadband frequency spectrum as well. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The key advantages of using ferroelectric are the potential for significant size-reduction of the microwave components and systems and the cabibility for integration with microelectronic circuits due to the utilization of thin and thick ferroelectric film technology. In this chapter, ZOR is discussed and the conceptual operation is introduced. The ZOR is designed and simulated by the full-wave analysis software. The response is studied using electromagnetic characteristics with the applied electric field, ferroelectric thickness, and the operating temperature.

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MCM substrate with high capacitance

Cited by 17 publications

References 0 publications

X-ray photoelectron spectroscopy study of Al/Ta2O5 and Ta2O5/Al buried interfaces

X-ray photoelectron spectroscopy study of Al/Ta2O5 and Ta2O5/Al buried interfaces

Tunable and adaptive LHM ZOR using a nonlinear dielectric thin film of STO

Tunable Zeroth-Order Resonator Based on Ferroelectric Materials

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