Mean Free Path of Hot Electrons and Holes in Metals

Stuart, Rhona; Wooten, F.; Spicer, W. E.

doi:10.1103/physrevlett.10.7

Cited by 42 publications

(13 citation statements)

References 5 publications

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“…These predictions agree well with experiments [1,2,41] and Mohamed's model as well [2,41]. As the length increases further, the active number of free electrons becomes saturate due to the temporal and spatial correlation limited by the free path effect of electrons [42]. Our model taking the concept of the COFE correctly predicts that the OPL emission becomes saturate as the length of nanorod increases to about 50 nm [1,2,41].…”

Section: Modelsupporting

confidence: 87%

“…Clearly, the QY of a bulk film can be as low as 10 −8.5 and that of a single nanorod can be two to three orders higher. More importantly, our model correctly predicts the observed saturation of the QY of the OPL from a single gold nanorod [1] even without taking into account the free path effect of the electrons [42]. We find that the QY increases first when L is small and then becomes saturate at ∼ L s = 25 nm .…”

Section: Theoretical Prediction Of Quantum Yieldsupporting

confidence: 57%

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Plasmonic nano-resonator enhanced one-photon luminescence from single gold nanorods

Xia

Shen

et al. 2015

SPIE Proceedings

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Strong Stokes and anti-Stokes one-photon luminescence from single gold nanorods is measured in experiments. It is found that the intensity and polarization of the Stokes and anti-Stokes emissions are in strong correlation. Our experimental observation discovered a coherent process in light emission from single gold nanorods. We present a theoretical mode, based on the concept of cavity resonance, for consistently understanding both Stokes and anti-Stokes photoluminescence. Our theory is in good agreement of all our measurements.

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Section: Modelsupporting

confidence: 87%

Section: Theoretical Prediction Of Quantum Yieldsupporting

confidence: 57%

Plasmonic nano-resonator enhanced one-photon luminescence from single gold nanorods

Xia

Shen

et al. 2015

SPIE Proceedings

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“…However, other issues may arise in this case, which may prevent the device from reaching the predicted value of the limiting efficiency. Although previous work reported comparable mean free path ranges for the hot electrons and holes in Au, 21 recent calculations of the total relaxation times of hot charge carriers in gold show that hot holes arising from d states lose energy on a sub-5femtosecond time scale 27 , which makes hot d holes challenging to extract before thermalization. Some improvements to the limiting conversion efficiency may be achieved by the e-DOS modification via quantum confinement effects in low-dimensional Au absorbers 5,17 .…”

Section: Discussion and Outlookmentioning

confidence: 93%

“…To estimate the limiting efficiency, we assume that hot electrons travel ballistically to the junction and are subsequently emitted into the semiconductor to generate a photocurrent. This assumption can reasonably be applied in the cases when the thickness of the absorber is significantly thinner than the mean free path of the hot charge carrier, which for Au is about 40nm 21,22 . We also assume perfect momentum matching, which once again is justified for an Au absorber with characteristic dimensions much smaller that the carrier mean free path, as multiple reflections from the material interface increase the hot carrier emission probability.…”

Section: Full-spectrum Conversion Via Internal Photoemission Through mentioning

confidence: 99%

Limiting efficiencies of solar energy conversion and photo-detection via internal emission of hot electrons and hot holes in gold

et al. 2015

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We evaluate the limiting efficiency of full and partial solar spectrum harvesting via the process of internal photoemission in Au-semiconductor Schottky junctions. Our results based on the ab initio calculations of the electron density of states (e-DOS) reveal that the limiting efficiency of the full-spectrum Au converter based on hot electron injection is below 4%. This value is even lower than previously established limit based on the parabolic approximation of the Au electron energy bands. However, we predict limiting efficiency exceeding 10% for the hot holes collection through the Schottky junction between Au and p-type semiconductor. Furthermore, we demonstrate that such converters have more potential if used as a part of the hybrid system for harvesting high-and low-energy photons of the solar spectrum.

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“…representing the number of round trips a hot carrier can travel back and forth in the Au film before its energy E 0 is reduced to Ф B and has no chance to jump over the Schottky barrier; L is the mean free path of 74 nm (55 nm) for an electron (a hole) in Au [18]. For a given Au-Si Schottky contact, Ф B is fixed (i.e.…”

mentioning

confidence: 99%

Proposal of a broadband, polarization-insensitive and high-efficiency hot-carrier schottky photodetector integrated with a plasmonic silicon ridge waveguide

Liu

Kou

Shen

et al. 2015

J. Opt.

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We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a hybrid plasmonic silicon waveguide. It has a gold film covering both the top and the sidewalls of a dielectric silicon waveguide with the Schottky contact formed at the gold-silicon interface. An extensive physical model is presented in detail and applied to calculate and analyze the performance of our detector. By comparison with a diode with only top contact of gold, the polarization sensitivity of responsivity is greatly minimized in our photodetector with sidewall coverage of gold.Much higher responsivities for both polarizations are also achieved in a very broad wavelength range of 1.2-1.5 μm. Moreover, the Schottky contact is only 4 μm long, leading to a very small dark current. Our design is very promising for practical applications in high-density silicon photonic integration.Internal photoemission (IPE) is an intrinsic property of a Schottky diode, occurring at a metal-semiconductor interface [1]. In IPE, three processes are involved.Firstly, an electron (hole) in the metal is excited to a higher level after absorbing a photon, becoming a hot electron (hot hole). Secondly, the hot carrier (electron or hole) travels to the metal-semiconductor interface. During its travel, the hot carrier may lose some energy due to scattering by cold carriers or by thermal relaxation. Finally, upon

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Mean Free Path of Hot Electrons and Holes in Metals

Cited by 42 publications

References 5 publications

Plasmonic nano-resonator enhanced one-photon luminescence from single gold nanorods

Plasmonic nano-resonator enhanced one-photon luminescence from single gold nanorods

Limiting efficiencies of solar energy conversion and photo-detection via internal emission of hot electrons and hot holes in gold

Proposal of a broadband, polarization-insensitive and high-efficiency hot-carrier schottky photodetector integrated with a plasmonic silicon ridge waveguide

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