Measured and calculated radiative lifetime and optical absorption of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:mo>/<

Berkowicz, Eyal; Gershoni, D.; Bahir, G.; Lakin, E.; Shilo, Doron; Zolotoyabko, E.; Abare, A. C.; DenBaars, Steven P.; Coldren, L.A.

doi:10.1103/physrevb.61.10994

Cited by 143 publications

(96 citation statements)

References 37 publications

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“…13 The subsequent overgrowth process is carried out by MOCVD with a growth temperature, V/III ratio and pressure at 1120 C, 1600, and 75 Torr, respectively, followed by the growth of InGaN/GaN MQWs. Semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) InGaN/GaN MQWs with a wide spectral range have been grown, and their peak emission wavelengths span from 497 to 591 nm, covering the whole green and yellow spectral ranges. Detailed X-ray diffraction and transmission electron microscopy (TEM) measurements show the indium composition is from 27% to 47%, demonstrating a great enhancement in indium incorporation over either c-plane or non-polar orientation.…”

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confidence: 99%

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Stokes shift in semi-polar (112¯2) InGaN/GaN multiple quantum wells

Zhang

Smith

Hou

et al. 2016

Applied Physics Letters

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The mechanism for the large Stokes Shifts of InGaN/GaN structures is under debate. Here, we report a systematic study on the Stokes shift of semi-polar (112¯2) InGaN/GaN multiple quantum wells (MQWs) with a wide spectral range from green (490 nm) to yellow (590 nm) by means of both photoluminescence excitation and time resolved PL measurements in comparison with their c-plane counterparts. The semi-polar samples exhibit a lower Stokes shift than their c-plane counterparts, although they show stronger localization effect than their c-plane counterparts. In the long wavelength region, the Stokes shift of the semi-polar MQWs shows a linear relationship with emission energy, but with a smaller gradient compared with their c-plane counterparts. The time-resolved PL measurements confirm a significant reduction in piezoelectric field of the semi-polar samples compared with the c-plane counterparts. It is suggested that the piezoelectric field induced polarization is the major mechanism for causing the large Stokes shift. The presented results contribute to better understanding of the long standing issue on the mechanism for the large Stokes shift.

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confidence: 99%

“…A single (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN layer with a thickness of 1.3 lm is grown on m-plane sapphire using our high temperature AlN buffer technique by MOCVD. 14 For the subsequent overgrowth, mask-patterned micro-rod arrays have been fabricated on the semi-polar GaN layer.…”

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confidence: 99%

Stokes shift in semi-polar (112¯2) InGaN/GaN multiple quantum wells

Zhang

Smith

Hou

et al. 2016

Applied Physics Letters

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“…The red shift of the free-carrier band of 20 meV is related to the band gap shrinkage. The blue shift of the localised exciton luminescence is attributed to the band filling effect [5,7], rather than to screening of the built-in field, since the luminescence intensity increases linearly with pump ( Fig. 2b).…”

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confidence: 99%

“…Although optical properties of InGaN/GaN quantum well structures are being widely investigated, the emission mechanisms in this system are still not completely understood [1][2][3][4][5][6][7]. Localised excitons is the most probable mechanism responsible for emission from InGaN/GaN MQWs, however the emission efficiency is highly sensitive to impurity and interface states, inhomogeneities and compositional separation of the InGaN alloy as well as to built-in electric field [3][4][5][6][7].Here we report on a study of InGaN/GaN MQW structures with various well thickness, d, by temperature-dependent, excitation power-dependent and time-resolved photoluminescence techniques. The samples were grown on sapphire substrates by metalorganic chemical vapour deposition.…”

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Luminescence of Localised Excitons in InGaN/GaN Multiple Quantum Wells

Miasojedovas

Juršėnas

Kurilčik

et al. 2002

phys. stat. sol. (c)

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. Although optical properties of InGaN/GaN quantum well structures are being widely investigated, the emission mechanisms in this system are still not completely understood [1][2][3][4][5][6][7]. Localised excitons is the most probable mechanism responsible for emission from InGaN/GaN MQWs, however the emission efficiency is highly sensitive to impurity and interface states, inhomogeneities and compositional separation of the InGaN alloy as well as to built-in electric field [3][4][5][6][7].Here we report on a study of InGaN/GaN MQW structures with various well thickness, d, by temperature-dependent, excitation power-dependent and time-resolved photoluminescence techniques. The samples were grown on sapphire substrates by metalorganic chemical vapour deposition. The undoped MQW structures were grown at temperatures of 1020 and 720 C for GaN and InGaN, respectively, and consisted of five periods of 10 nm thick GaN barriers and In x Ga 1--x N (x 0.15) wells. A series of samples with d ¼ 2, 2.5, 3, 3.5, and 4 nm were investigated.Luminescence spectra of structures studied show two main bands originated from the QW and barrier/buffer layers (Fig. 1). These two bands dominate in the emission over a broad range of excitation intensities. The QW luminescence is Stokes shifted by about 220 meV in respect to the estimated bandgap. It is attributed to the localised excitons. The barrier/buffer related band is situated at the bandgap energy of GaN and is attributed to the free-carrier emission. The QW luminescence blueshifts with increasing exci-

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“…Therefore it is important to understand the carrier relaxation and recombination mechanisms in InGaN structures. In addition to many studies on recombination times, 5,6,7 there have been a limited number of reports on ultrafast carrier dynamics in InGaN heterostructures 8,9 and multiple quantum wells (MQW). 10,11 Measurements on heterostructures, single QWs, and MQWs have emphasized different aspects of carrier relaxation in nitrides.…”

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confidence: 99%

Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and an
Özgür
¹
,
Everitt
²

2003
Phys. Rev. B

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Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation wavelength and intensity. Spectrallyresolved sub-picosecond relaxation due to carrier redistribution and QW capture was found to depend sensitively on the wavelength of pump excitation. Moreover, for pump intensities above a threshold of 100 µJ/cm 2 , all samples demonstrated an additional emission feature arising from stimulated emission (SE). SE is evidenced as accelerated relaxation (< 10 ps) in the pump-probe data, fundamentally altering the re-distribution of carriers. Once SE and carrier redistribution is completed, a slower relaxation of up to 1 ns for GaN and InGaN epilayers, and 660 ps for the MQW sample, indicates carrier recombination through spontaneous emission.

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Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/<

Cited by 143 publications

References 37 publications

Stokes shift in semi-polar (112¯2) InGaN/GaN multiple quantum wells

Stokes shift in semi-polar (112¯2) InGaN/GaN multiple quantum wells

Luminescence of Localised Excitons in InGaN/GaN Multiple Quantum Wells

Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and an
Özgür
¹
,
Everitt
²

2003
Phys. Rev. B

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Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/<

Cited by 143 publications

References 37 publications

Stokes shift in semi-polar (112¯2) InGaN/GaN multiple quantum wells

Stokes shift in semi-polar (112¯2) InGaN/GaN multiple quantum wells

Luminescence of Localised Excitons in InGaN/GaN Multiple Quantum Wells

Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and anÖzgür1, Everitt2 2003Phys. Rev. B

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Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and an
Özgür
¹
,
Everitt
²

2003
Phys. Rev. B