Measured intrinsic defect density throughout the entire band gap at the <100> Si/SiO₂interface

Abstract

Conductance-frequency measurements down to temperatures of 100 K have been performed on both p-type and n-type (100) silicon oxidized in dry oxygen at 900 "C. The metal electrode capacitors used were not given a postmetallization anneal in forming gas. This has allowed measurements of the intrinsic density of states, capture cross section. and surface potential fluctuations to within 0.06 eV of the band edges. Two peaks in the defect density at energies of 0.3 eV and 0.85 eV above t h e valence band are clearly visible above a n asymmetric background, which rises rapidly towards the conduction band edge. The capture cross Section is near constant at -10" cm2 across the gap and independent of temperature. The surface potential fluctuations reveal a peak value of -70 meV centred at 0.4 eV above the valence band superimposed on a constant background of -40 meV. W e attribute the peaks in the density of states to the amphoteric trivalent silicon P, centres. The probable causes of the asymmetric background are either the tail of a defect peak centred around the conduction band edge, or states descendina from t h e conduction band induced bv stress within the oxide.

Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes

“…Werner and Guttler [34] and Osvald and Horvath [31] show that at lower temperatures, the lower barrier patches carry a large fraction of the conduction. Similar results in C-V-T curves have been reported in the literature by Sands et al [35]. They show that the accumulation capacitance decreases with increasing temperature.…”

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

“…On the other hand, Aydın et al [40] found that density distribution profile of N ss has U shape behavior. Similar results have been also reported in literature [45,46]. Such behavior of N ss can be attributed to interface state continuum and not with single level states or bands of interfacial states as suggested by Kar and Dahlke [14].…”

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

“…Later, a modification for treating the influence of varying surface potential was suggested by Deuling et al 11 and a large number of applications in using the conductance method have followed. [12][13][14][15][16][17][18][19][20] The basic charge carrier statistics for all these approaches to the conductance method leaned on a treatment by Lehovec. 21 The conductance contribution from the interface states was given by an analytical expression obtained by integration across the thermally accessible energy range around the Fermilevel.…”