Silicon
materials used in semiconductor and photovoltaic products
have strict purity requirements. The quality of materials will be
affected severely if even trace amounts of PH3 are contained
in the hydrogen of the chemical vapor deposition (CVD) stove. Thus,
it is critical that the content of PH3 be controlled under
a certain level. In contrast to series of metal oxide adsorbents reported
in other research, 13X zeolite modified with ZnCl2 (Zn-13X)
and CuCl2 (Cu-13X) was prepared to adsorb trace PH3 in this study. Breakthrough curves and adsorption capacities
at different temperatures from −15 to 50 °C were investigated
to determine the performance of the adsorbents. X-ray diffraction
and surface analysis were carried out to characterize the adsorbents
and the adsorption mechanism. The results showed that CuCl2 was dispersed on 13X in monolayer or submonolayer form, and ZnCl2 would change the structure of 13X under the experimental
condition. New diffraction peaks at 35.6° and 38.8° appeared
after loading CuCl2 in the X-ray diffraction pattern of
Cu-13X, and the peak of Zn-13X at 10° almost disappeared. The
half-pore width after modification was mainly centralized at 0.5 nm
for each of them, and the specific surface areas of Cu-13X and Zn-13X
were 245.2 and 19.2 m2/g, respectively. The breakthrough
time for Cu-13X was always more than 600 min, whereas it sharply decreased
from 350 to 20 min for Zn-13X when the temperature increased to 50
°C from −15 °C. The static adsorption capacity decreased
from 106.5 mg to 67.2 mg and from 88.3 mg to 36.1 mg of PH3, respectively, for per-gram Cu-13X and Zn-13X as the adsorption
temperature changed in the chosen range. The working life of Cu-13X
could be prolonged by N2 purging at room temperature according
to experimental results because the rate of chemical reaction coupled
with the adsorption between PH3 and the active components
was much slower than that of its physical adsorption, but a higher
temperature was needed for Zn-13X.