2013
DOI: 10.1109/ted.2013.2254117
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Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs

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Cited by 17 publications
(9 citation statements)
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“…The differences are accentuated for the strong base currents. Our results are very similar with that demonstrated in [10] with the same type of HBT (InGaP/GaAs) but with different dimensions.…”
Section: Characteristics Of Ingap/gaas Hbtssupporting
confidence: 90%
See 1 more Smart Citation
“…The differences are accentuated for the strong base currents. Our results are very similar with that demonstrated in [10] with the same type of HBT (InGaP/GaAs) but with different dimensions.…”
Section: Characteristics Of Ingap/gaas Hbtssupporting
confidence: 90%
“…A major issue of the power HBT's is that the current gain is decreased with junction temperature due to self-heating effect giving rise to a negative differential resistance. Several researches have proposed specific configurations to enhance the thermal stability of GaAs-based HBTs [9,10]. This work describes three issues about temperature dependence: Gummel plot, current gain and RF performances of InGaP/GaAs HBT's.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it is characterized by the Taylor series to reduce the number of parameters and simplify the modeling work. The first-order Taylor approximation is able to meet the engineering requirements in terms of prediction precision because there is a quasi-linear decrease of the current with the increase of the temperature over the region of interest [30]. Fig.…”
Section: B Temperature-dependent Current Modelmentioning
confidence: 99%
“…In InP HBTs, however, the device architecture is fundamentally different due to their mesa structure and absence of trench isolations, thus requiring a new formulation for the ZTH. There have been efforts to model thermal behavior in III-V HBTs through extensive characterization and VBIC [9], R-C network based small signal [10] or 3D finite element simulations [11]. In this paper, we propose a comprehensive and computationally efficient as well as geometry scalable HiCuM-integrated compact model implementation of electro-thermal network for InGaAs/InP HBTs derived from physical relations which can be used in time and frequency domain analyses with three cells, improving model computation time.…”
Section: Introductionmentioning
confidence: 99%