Measurement and modeling techniques for InP-based HBT devices to 220GHz

Lu, Haijun; Cheng, Wei; Zhou, Ziyao; Li, Oupeng; Niu, Bin; Kong, Yuechan; Chen, Tangsheng

doi:10.1109/edssc.2016.7785227

Cited by 3 publications

(2 citation statements)

References 7 publications

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“…To this aim, precise characterization and modelling of the devices in the sub-THz frequency range is compulsory to optimize the circuit performance and to minimize the number of design to fabrication loops [4]. While very high frequency on-wafer measurement of III-V based devices and circuits have frequently been published [5], [6], [7], [8], and reported up to 750 GHz [9], [10], the characterization of transistors above 110 GHz on Si-wafers remains challenging [11]. Only very few demonstrations of transistor measurements at higher frequencies have been performed on silicon substrate [12].…”

mentioning

confidence: 99%

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Fregonèse

Matos

Deng

et al. 2018

IEEE Trans. Microwave Theory Techn.

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This paper investigates on-wafer characterization of SiGe HBTs up to 500 GHz. Test structures for on-wafer TRL calibration have been designed and are presented. The TRL calibration method with silicon standards has first been benchmarked through EM-simulation. Passive and active components are then characterized up to 500 GHz. The slight discontinuities between the frequency bands are explored. A specific focus was placed on incorrect horizontal probe positioning as well as on probe deformation, resulting in a better assessment of possible measurement errors.

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mentioning

confidence: 99%

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Fregonèse

Matos

Deng

et al. 2018

IEEE Trans. Microwave Theory Techn.

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“…The small-signal model is important since it is the basis of the large signal model, and provides important information to the foundry to guide structure optimization and process improvement. Small-signal models for InP HBT/DHBT devices have been extensively reported, [21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] with verification, typically below 100 GHz, provided.…”

Section: Introductionmentioning

confidence: 99%

Machine learning technique based extremely broadband small‐signal behavioral model forInP DHBTs

Cai

Liu

King

et al. 2020

Int J RF Microw Comput Aided Eng

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A novel modeling methodology for indium phosphide (InP) double heterojunction bipolar transistors (DHBTs) based on the theory of Bayesian inference, a well‐known method from the field of machine learning, is presented in this article. An extremely broadband small‐signal behavioral model, from 200 MHz to 325 GHz, is built, tested, and validated in this work, with excellent agreement obtained between the extracted model and the experimental data in the form of S‐parameters. A single finger InP DHBT device, with emitter size of 0.5 × 5 μm2 exhibiting an ft of over 550 GHz, is used in the verification example. Taking advantage of regression techniques based on machine learning concepts, the proposed black‐box behavioral model can more accurately predict the behavior of the device compared with the traditional equivalent circuit modeling method. Several sets of measured vs modeled data are shown, indicating the efficacy of the method.

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A broadband small‐signal model extraction methodology over 0.2‐220 GHz for bulk FinFETs in RF CMOS technology

Zhou

Liu

Chen

et al. 2020

Int J Numerical Modelling

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This study presents a physical‐based broadband radio frequency (RF) small‐signal equivalent circuit model (ECM) for triple‐gate (TG) bulk fin field‐effect transistors (FinFETs) and its extraction methodology. To increase model accuracy and extend the effective frequency band, substrate effect, test ground‐signal‐ground (G‐S‐G) pads, and metal interconnection parasitics are considered together in the transistor model. All the elements in the model are extracted from a combination of analysis and physical equations using multibias scattering parameters. On the basis of the proposed model, the simulation results correspond to the measured results in the frequency range from 200 MHz to 220 GHz without any complex fitting or optimization steps.

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Measurement and modeling techniques for InP-based HBT devices to 220GHz

Cited by 3 publications

References 7 publications

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Machine learning technique based extremely broadband small‐signal behavioral model forInP DHBTs

A broadband small‐signal model extraction methodology over 0.2‐220 GHz for bulk FinFETs in RF CMOS technology

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