Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

Zheng, Peiting; Rougieux, Fiacre; Macdonald, Daniel; Cuevas, Andrés

doi:10.1109/jphotov.2013.2294755

Cited by 6 publications

(4 citation statements)

References 28 publications

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“…From our results, we can conclude that the Klaassen model offers a better description of the experimental data retrieved by TRTS. A conclusion that agrees with non-contact PCD data collected over a narrower injection level window [9,13,29,30]. At present we cannot rationalize the slight deviation between TRTS data and those retrieved by contact methods for concentrations above 1•10 16 cm -3 , in this respect, Klassen suggests that this data might be underestimated by an increase of temperature in the system during the measurements [6].…”

Section: Resultssupporting

confidence: 57%

“…We are only aware of a couple of PCD works that have previously attempted such study. In these works they found that Klaassen model failed to describe the experimentally resolved trend for temperatures below ~150 K [9,29]. The reason for this disagreement is unclear to us, however, we note that for low temperatures, one should consider an extra effect decreasing charge carrier density in silicon, an effect linked to the condensation of photogenerated e-h pairs into excitons.…”

Section: Resultsmentioning

confidence: 76%

“…parameters as the charge carrier concentration via doping, the temperature and the injection level [1,2]. To our knowledge, pioneering studies of the charge-carrier mobility dependence vs injection level in silicon were made in the 70s from contact-based techniques [3,4] and these results still represents nowadays the basis for semi-empirical models employed in modelling charge carrier mobility as a function of charge carrier density in silicon [5][6][7][8][9]. These initial studies analyzed the interplay of mobility and injection level by contact-based approaches, and hence required the manufacturing of a fully functional working device (e.g., a PIN or PN diode structure).…”

mentioning

confidence: 99%

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Contactless determination and parametrization of charge-carrier mobility in silicon as a function of injection level and temperature using time-resolved terahertz spectroscopy

Revuelta

Cánovas²

2023

Phys. Rev. B

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Here, we analyze in a non-contact fashion charge carrier mobility as a function of injection level and temperature in silicon by time resolved THz spectroscopy (TRTS) and parametrize our data by the classical semi-empirical models of Klaassen and Dorkel & Leturcq. Our experimental results are in very good agreement with the pioneering works of Krausse and Dännhauser analyzing this phenomena by employing contact-based methods. This agreement, that validates our methodology, can only be achieved by considering charge carrier diffusion effects following above bandgap near-surface pump photo-excitation of the sample. From our results, obtained over a large range of injection levels, we conclude that the model of Klaassen is the best on describing the collected data at room temperature. Furthermore, we analyze by TRTS the dependence of charge carrier mobility with temperature for a fixed injection level. Once more, the parametrization made by the classical model of Klaassen describe our data appropriately even without the necessity of applying any fitting parameters (just with the charge carrier density as an input). In this respect, our work supports the validity of the model and parametrization proposed by Klaassen, and also illustrate how TRTS can be reliably employed for the quantitative determination of mobility in semiconductors as a function of key parameters as injection level and temperature.

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Section: Resultssupporting

confidence: 57%

Section: Resultsmentioning

confidence: 76%

mentioning

confidence: 99%

See 1 more Smart Citation

Contactless determination and parametrization of charge-carrier mobility in silicon as a function of injection level and temperature using time-resolved terahertz spectroscopy

Revuelta

Cánovas²

2023

Phys. Rev. B

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“…It can be observed that, as the temperature increased, the sensitivity of the sensor decreased, while the zero-output increased (for the convenience of comparison, this paper regards the output of the pressure sensor as the zero output at 2 bar). This is because the carrier mobility of silicon decreases with the increasing temperature; thus, the piezoresistive coefficient of the sensor decreases [ 31 ], resulting in a decrease in the sensor sensitivity. The ideal sensor chip has a uniform doping concentration and four identical resistors (R1 = R2 = R3 = R4).…”

Section: Resultsmentioning

confidence: 99%

Design, Fabrication, and Dynamic Environmental Test of a Piezoresistive Pressure Sensor

et al. 2022

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Microelectromechanical system (MEMS) pressure sensors have a wide range of applications based on the advantages of mature technology and easy integration. Among them, piezoresistive sensors have attracted great attention with the advantage of simple back-end processing circuits. However, less research has been reported on the performance of piezoresistive pressure sensors in dynamic environments, especially considering the vibrations and shocks frequently encountered during the application of the sensors. To address these issues, this paper proposes a design method for a MEMS piezoresistive pressure sensor, and the fabricated sensor is evaluated in a series of systematic dynamic environmental adaptability tests. After testing, the output sensitivity of the sensor chip was 9.21 mV∙bar−1, while the nonlinearity was 0.069% FSS. The sensor overreacts to rapidly changing pressure environments and can withstand acceleration shocks of up to 20× g. In addition, the sensor is capable of providing normal output over the vibration frequency range of 0–5000 Hz with a temperature coefficient sensitivity of −0.30% FSS °C−1 over the temperature range of 0–80 °C. Our proposed sensor can play a key role in applications with wide pressure ranges, high-frequency vibrations, and high acceleration shocks, as well as guide MEMS-based pressure sensors in high pressure ranges and complex environmental adaptability in their design.

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On the quantification of Auger recombination in crystalline silicon

Black

Macdonald

2022

Solar Energy Materials and Solar Cells

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Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

Cited by 6 publications

References 28 publications

Contactless determination and parametrization of charge-carrier mobility in silicon as a function of injection level and temperature using time-resolved terahertz spectroscopy

Contactless determination and parametrization of charge-carrier mobility in silicon as a function of injection level and temperature using time-resolved terahertz spectroscopy

Design, Fabrication, and Dynamic Environmental Test of a Piezoresistive Pressure Sensor

On the quantification of Auger recombination in crystalline silicon

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