Measurement and simulation of spreading current in interlayer dielectric film deposition by plasma-enhanced chemical vapor deposition

Abstract

A serious issue affecting metal–oxide–semiconductor field-effect transistors is plasma-induced charging damage caused by the spreading current during plasma-enhanced chemical vapor deposition of dielectric films. This current is studied in detail by direct measurement of the plasma-induced vacuum ultraviolet photocurrent through a deposited SiO2 film. The current increased with increasing antenna-wiring spacing, which spreads the electric field over a greater area. Furthermore, the photocurrent showed a parabolic dependence on film thickness. A finite element method simulation demonstrated that the current through a deposited SiO2 film increased when the spreading effect was dominant and decreased when the resistance increase was dominant.