2017
DOI: 10.1021/acsphotonics.7b00187
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Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique

Abstract: A novel ultrafast reflective grating-imaging technique has been developed to measure ambipolar carrier diffusion in GaAs/AlAs quantum wells and bulk GaAs. By integrating a transmission grating and an imaging system into the traditional pump−probe setup, this technique can acquire carrier diffusion properties conveniently and accurately. The fitted results of the diffusion coefficient and diffusion length in bulk GaAs agree well with the literature values obtained by other techniques. The diffusion coefficient … Show more

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Cited by 11 publications
(13 citation statements)
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“… 21 , the time resolution was limited to ~0.5 ns which prevented measurements at smaller grating period where second sound is expected at much higher temperatures. In this work, we replaced the CW laser with a femtosecond pulsed laser and used the standard ultrafast measurement technique in which the pump-probe delay time is varied to acquire time-dependent signals 43 , 44 . The experimental details can be found in Material and methods and the Supplementary Materials (SM1).…”
Section: Resultsmentioning
confidence: 99%
“… 21 , the time resolution was limited to ~0.5 ns which prevented measurements at smaller grating period where second sound is expected at much higher temperatures. In this work, we replaced the CW laser with a femtosecond pulsed laser and used the standard ultrafast measurement technique in which the pump-probe delay time is varied to acquire time-dependent signals 43 , 44 . The experimental details can be found in Material and methods and the Supplementary Materials (SM1).…”
Section: Resultsmentioning
confidence: 99%
“…Figure 2(a) shows that the peak of the ∆R/R 0 signal is proportional to the pump fluence, and the signals measured at different pump fluences overlap when normalized (as shown in the inset), which indicates that the pump fluences used in our experiments are small enough that the ∆R/R 0 value is linear with the excited carrier density. 20 Figure 2(b) shows the transient differential ∆R/R 0 signals of MBE MoTe 2 measured at different pump fluences. The signals are exponential decays superposed with clear periodic oscillations, which are the coherent acoustic phonons (strain pulse) generated by the pump laser and will be discussed later.…”
Section: -2mentioning
confidence: 99%
“…The magnitude of ∆R/R 0 signals is also proportional to the pump fluence, and the normalized signals overlap as shown in the inset, indicating that the pump fluence is low enough to ensure a linear relation between the value of ∆R/R 0 signals and the excited carrier density plus the phonon vibration amplitude. 20 The comparison of ∆R/R 0 signals in exfoliated and MBE MoTe 2 is shown in Fig. 2(c).…”
Section: -2mentioning
confidence: 99%
“…Studying carrier diffusion process can also reveal carrier scattering in semiconductors, assess carrier mobility with Einstein relation, and understand interactions between carriers and phonons, defects, and nanostructures. Currently, there are several optical techniques to measure the carrier diffusion coefficients nondestructively: transient grating [1,2], spatial scanning pump-probe [3,4], and grating imaging [5,6]. In the transient grating method, two pump beams overlap on the sample surface to generate a transient carrier density grating.…”
Section: Introductionmentioning
confidence: 99%