Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor

Dang, Xitong; Asbeck, P.M.; Yu, E. T.; Sullivan, G.J.; Chen, M. Y.; McDermott, B. T.; Boutros, K. S.; Redwing, Joan M.

doi:10.1063/1.124214

Cited by 93 publications

(49 citation statements)

References 13 publications

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“…5 (circles) corresponds to the mobility of 2D carriers calculated at a moderate field value of F = 3 kV/cm directly from the equation e v F µ = / where v is the drift velocity of the carriers at steady state and F is the applied field. This latter mobility values appear to be consistent with and in the same limits as the reported experimental mobility values [8,22,28,30]. To see how well the simulated results correspond to the experimental ones, experimental values reported in Ref.…”

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confidence: 89%

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Mobility of electrons in a AlGaN/GaN QW: Effect of temperature, applied field, surface roughness and well width

Yarar

Özdemir

2005

Physica Status Solidi (b)

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We study the dependence of low field mobility on various parameters such as well width and interface roughness for a two-dimensional electron gas confined to a AlGaN/GaN quantum well as a function of temperature. The potential profile, the energy levels, electron concentrations and wave functions for each level are found from the self-consistent numerical solution of Schrödinger and Poisson equations for the quantum well. Then the scattering rates for electrons due to acoustic phonons, optical phonons and interface roughness are obtained using the self consistently calculated wave functions. Ensemble Monte Carlo technique is used to find the drift velocities of the two-dimensional electrons along the interface. The mobility of two-dimensional electrons is extracted from these data. Electron transport properties of bulk GaN is also studied in order to compare the two and three-dimensional mobility values. It is seen that electron mobilities upto 40 × 10 3 cm 2 /Vs can be obtained in a 2DEG confined to an AlGaN/GaN hetero interface. The results of simulation are compared with experimental findings and it is seen that the agreement between simulation and experiments in two dimensions is very satisfactory.

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supporting

confidence: 89%

“…Experimental results from Refs. [8,22,28,30] are also shown in Fig. 7 to compare with the simulated results.…”

mentioning

confidence: 92%

Mobility of electrons in a AlGaN/GaN QW: Effect of temperature, applied field, surface roughness and well width

Yarar

Özdemir

2005

Physica Status Solidi (b)

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“…28 Therefore, to characterize self-heating effect, the channel temperature dependent mobility model is applied, 29 expressed as…”

Section: Sp Model Descriptionmentioning

confidence: 99%

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Zhou³

et al. 2017

ECS J. Solid State Sci. Technol.

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In this paper, the performance difference of AlGaN/GaN high-electron mobility transistors (HEMTs) with same epitaxial structure fabricated silicon carbide (SiC) and transferred to diamond substrate is examined based on the surface-potential (SP) model. The thermal resistances of these devices are extracted through finite element method (FEM) thermal analysis. Results show that GaN-ondiamond device has a lower thermal resistance than conventional GaN-on-SiC device, which demonstrates the thermal performance improvement of GaN-on-Diamond technology. By embedding thermal characteristic into carrier mobility in the conventional SP model, the effectiveness of model is validated through good agreement between simulation and measurements of DC and RF performance. Additionally, large-signal performance (output power P out , power added efficiency P AE and Gain) on these two similar devices are compared under identical bias and temperature conditions based on the improved SP model, making this work be effective for improving the process of GaN-on-Diamond HEMTs. The excellent performance of GaN materials including wide bandgap, high thermal conductivity, high electron saturation drift velocity makes it very suitable for the development of highfrequency, high-power microwave and millimeter-wave device and circuit applications.1,2 SiC material is presently a major choice to implement high-performance GaN HEMT due to its high thermal conductivity that is an order of magnitude greater than that of other materials such as sapphire. However, the heat dissipation issue appears more and more prominent with the development to direction of smaller size, greater output power and higher frequency. Therefore, to solve the degradation of device performance and reliability caused by heat dissipation, it is of utmost importance to reduce thermal resistance to get good thermal management. [3][4][5] Recently, GaN HEMT devices fabricated on diamond substrate (GaN-on-diamond) have been developed 6,7 due to its high thermal conductivity (2000 W/m · K) that is three to four times that of SiC. The application of diamond substrate can significantly reduce the temperature rise of device, which is expected to solve the performance degeneration under conditions of high bias and power drive. [8][9][10] Accurate device model, especially physical model, is essential for predicting device performance and guiding process development. This paper discusses the comparison result of performance between GaN HEMTs fabricated on SiC and diamond substrates based on the SP model. The paper is organized as follows. In Device structure and fabrication section, the structure and fabrication process of GaN-onDiamond HEMTs are described in detail. Then the 3D FEM model and SP model are described briefly in Thermal analysis setup and results section and SP model description for following performance verification and discussion in RF Performance verification section. Finally, Conclusion section is the conclusion. Device Structure and FabricationThe cross-section view o...

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“…In the model, it has been assumed that the voltage varies linearly with x in the ungated regions, so the voltage is given by the following relation [12]:…”

Section: Model Descriptionmentioning

confidence: 99%

Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

Yahyazadeh¹,

Hashempour²

2011

JMSE-A

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An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in high electron mobility transistors has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition temperature dependent of band gap, quantum well electron density, threshold voltage, mobility of electron, dielectric constant, polarization induce charge density in the device are also taken into account. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.

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Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor

Cited by 93 publications

References 13 publications

Mobility of electrons in a AlGaN/GaN QW: Effect of temperature, applied field, surface roughness and well width

Mobility of electrons in a AlGaN/GaN QW: Effect of temperature, applied field, surface roughness and well width

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

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