2016
DOI: 10.1117/1.jmm.15.2.023508
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Measurement of EUV lithography pupil amplitude and phase variation via image-based methodology

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Cited by 6 publications
(4 citation statements)
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“…[10][11][12][13] We have demonstrated this technique on several EUV optical systems. 11,9,13 In addition, we have developed a new algorithm based on principal component analysis (PCA). Although this results in a potentially lengthy model building step, the wavefront analysis step can be completed in under a quarter second.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…[10][11][12][13] We have demonstrated this technique on several EUV optical systems. 11,9,13 In addition, we have developed a new algorithm based on principal component analysis (PCA). Although this results in a potentially lengthy model building step, the wavefront analysis step can be completed in under a quarter second.…”
Section: Introductionmentioning
confidence: 99%
“…[6][7][8] In addition, we have previously shown that amplitude pupil variation in EUV imaging systems can be non-uniform. 9 We have developed Quick Inverse Pupil (QUIP)-a software suite developed for rapid characterization of pupil plane behavior based on images formed by that system. Both pupil amplitude and phase variation can be extracted using this software.…”
Section: Introductionmentioning
confidence: 99%
“…Interferometric techniques [1][2][3][4][5][6][7] or adaptive optics, while widely used in the visible spectrum [8][9][10][11] , require complicated and expensive hardware, making them impractical in the EUV regime. One measurement approach used in EUV is to image precisely-calibrated test objects 12,13 such as gratings 14,15 , contact arrays 16,17 , or custom features 18 , which do not require modifying the system hardware. However, known test objects containing features with sizes near the resolution limit of the imaging system are difficult or expensive to fabricate with high fidelity.…”
mentioning
confidence: 99%
“…Measuring aberrations usually requires resolution targets [1], which are not readily available for the extreme ultraviolet (EUV) wavelength (λ = 13.5 nm) due to fabrication constraints. Previous EUV microscope characterization has used point-like contacts [2] and custom features [3], but they were limited to specific aberrations and relied on known patterns, often with imperfections and prone to sample-induced aberrations [4].…”
mentioning
confidence: 99%