Measurement of Gain, Group Index, Group Velocity Dispersion, and Linewidth Enhancement Factor of an InGaN Multiple Quantum-Well Laser Diode

Gan, Kian-Giap; Bowers, John E.

doi:10.1109/lpt.2004.826003

Cited by 17 publications

(7 citation statements)

References 8 publications

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“…Therein, differential gain g 0 , gain compression factor ε , saturated material gain g s , and line enhancement factor α are the main fitting parameters. The used values of these main parameters for the best simulations of the experimental results were in very good agreement with the results of theoretical calculations and experiments in the references 33 34 35 36 37 . Other parameters are device parameters or fixed values obtained from references or experimental results.…”

Section: Methodssupporting

confidence: 81%

Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers

Chen

Ito

Asahara

et al. 2014

Sci Rep

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Short pulses generated from low-cost semiconductor lasers by a simple gain-switching technique have attracted enormous attention because of their potential usage in wide applications. Therein, reducing the durations of gain-switched pulses is a key technical point for promoting their applications. Therefore, understanding the dynamic characteristics of gain-switched pulses is highly desirable. Herein, we used streak camera to investigate the time- and spectral-resolved lasing characteristics of gain-switched pulses from optically pumped InGaN single-mode vertical-cavity surface-emitting lasers. We found that fast initial components with ultra-short durations far below our temporal resolution of 5.5 ps emerged on short-wavelength sides, while the entire pulses were down-chirped, resulting in the simultaneous broadening of the spectrum and pulse width. The measured chirp characteristics were quantitatively explained using a single-mode rate-equation model, combined with carrier-density-dependent gain and index models. The observed universal fast short-wavelength components can be useful in generating even shorter pulses from gain-switched semiconductor lasers.

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Section: Methodssupporting

confidence: 81%

Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers

Chen

Ito

Asahara

et al. 2014

Sci Rep

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“…The mode spacing, , can be calculated according to the formula, = 2 /(2 ), where is the lasing wavelength and is the effective cavity length with the ITO VCSEL having a 1199.3 nm thick cavity and the TJ VCSEL having a 1270.8 nm thick cavity. 62 Assuming a group index, , of ~3.3, 74 the mode spacing is calculated to be ~21.3 nm for the ITO VCSEL cavity and ~20.7 nm for the TJ VCSEL cavity, both of which are in good agreement with the measured value. Thus, both the TJ VCSEL and ITO VCSEL have single longitudinal mode emission.…”

Section: -78supporting

confidence: 70%

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

et al. 2016

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We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 µm aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of ~550 µW with a threshold current density of ~3.5 kA/cm 2 , while the ITO VCSELs show peak powers of ~80 µW and threshold current densities of ~7 kA/cm 2 .

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“…The emission spectra of laser diodes offer a particularly simple yet very rich pool of information, which has not been taken advantage of fully. Nevertheless, different methods like, for instance, Hakki-Paoli gain measurements, or Fourier transforms have been successfully applied and interpreted [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes

Eichler

Schad

Scholz

et al. 2005

IEEE Photon. Technol. Lett.

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Abstract-We present measurements on an aperiodic devicespecific longitudinal-mode pattern in InGaN laser diodes. The characteristic shape of this pattern occurs only if the laser is driven slightly above threshold; in addition, it tunes with temperature at exactly the same rate as the cavity modes. By careful selection of the collection optics and averaging ten rapid scans over 15 min in a high-resolution Fourier transform spectrometer, we could exclude possible explanations like beating of mode families, self-pulsation, or external reflections. A naive simulation of the longitudinal modes profiting from their individual "gain profile" along the cavity suggests that we see the signature of quantum-well thickness fluctuations.Index Terms-Emission spectrum, InGaN laser diodes, irregular spectral envelope.

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Measurement of Gain, Group Index, Group Velocity Dispersion, and Linewidth Enhancement Factor of an InGaN Multiple Quantum-Well Laser Diode

Cited by 17 publications

References 8 publications

Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers

Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes

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