Measurement of Hall scattering factor in phosphorus-doped silicon

Abstract

A combination of measurements of electrical resistivity, Hall mobility, and phosphorus concentration by secondary ion mass spectroscopy has determined the value of the Hall scattering factor in P-doped epitaxially grown Si. The Hall scattering factor is found to increase from a value close to unity at a P concentration around 1017 cm−3, to ∼1.3 in the 1018–1019 cm−3 doping range. At higher doping levels it decreases and saturates to a value of ∼0.9 for doping levels higher than 1020 cm−3.

Fabrication and Characterization of Epitaxial Heavily Phosphorus‐Doped Silicon

“…Most power and low noise analog FET's use a recessed gate geometry in which the gate stripe is placed in an etched slot to locate it slightly below the semiconductor surface (2). Most power and low noise analog FET's use a recessed gate geometry in which the gate stripe is placed in an etched slot to locate it slightly below the semiconductor surface (2).…”

Does the Hall coefficient exhibit critical behavior approaching the metal-insulator transition?

“…The results for uncompensated Si:P and Si:As do not give evidence for scaling of 1 /Ruin the absence of scaling for l/Ru then this quantity should vary with density as n/A(n) where the Hall correction factor Ain) has been experimentally determined for Si:P (Ref. 18) and over a narrower range for Si:As. 19 The two solid lines in Fig.…”

Electrical resistivity of bismuth implanted into silicon

“…Five implantations with energies of 35, 70, 120, 200, and 360 keV were accumulated in each sample with proper doses to result in a plateaulike depth profile of Bi with ϳ5% deviation up to the depth of 0.15 m, according to TRIM simulation. 24 Samples with Bi concentrations of 5ϫ10 17 , 5ϫ10 18 , 1ϫ10 19 , 5ϫ10 19 , 1ϫ10 20 , and 5ϫ10 20 cm Ϫ3 were prepared and labeled as samples 1, 2, 3, 4, 5, and 6, respectively. For sample 6 the implanted Bi doses are 5ϫ10 14 15 cm Ϫ2 ͑at 360 keV͒.…”

“…This behavior is more accentuated in Si:Bi compared to other n-type-doped Si systems. 3,[10][11][12][13]17,18 In Si:P, for instance, increasing temperature, from 4.2 to 300 K, results in a lower resistivity below the MNM transition. 19,20 There is a crossover of around N c for this range of temperatures.…”